275-501N16A-00 Allicdata Electronics
Allicdata Part #:

275-501N16A-00-ND

Manufacturer Part#:

275-501N16A-00

Price: $ 14.46
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS-RF
Short Description: RF MOSFET N-CHANNEL DE275
More Detail: RF Mosfet N-Channel 590W DE275
DataSheet: 275-501N16A-00 datasheet275-501N16A-00 Datasheet/PDF
Quantity: 179
1 +: $ 13.13550
10 +: $ 11.93980
100 +: $ 10.14880
Stock 179Can Ship Immediately
$ 14.46
Specifications
Series: DE
Packaging: Tube 
Part Status: Active
Transistor Type: N-Channel
Frequency: --
Gain: --
Current Rating: 16A
Noise Figure: --
Power - Output: 590W
Voltage - Rated: 500V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE275
Description

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The 275-501N16A-00 is a model of Field-Effect Transistor (FET) which is used to amplify signals. This is a popular model of transistor used in radio frequency (RF) applications, and it can be used in a variety of electronic projects. This model of transistor is also distinguished by its N-channel feature, which is why it is particularly suitable for RF amplifiers.

In order to understand how this model of FET works, it is important to understand the basics of how transistors work. A transistor consists of two layers of a semi-conducting material. One of these layers, known as the channel, contains carriers of electric charge that are usually either electrons or holes (positive charge carriers). These carriers, are known as “carrier packets”, and they flow through the channels when an electric signal is applied.

When a voltage is applied to an FET, it causes an electric field to be created between the gate and the source. This electric field acts like an “electronic battery”, and when it is charged, it causes the carriers in the channel to move either towards the source or the drain. This motion of the carrier packets can be used to amplify signals. In the case of a RF amplifier, the amplified signal is what is then sent out to the user.

In the case of the 275-501N16A-00 model, this MOSFET has two distinct characteristics that make it ideal for RF applications. Firstly, it has a larger size and capacity than other models. This makes it easier to ensure that it will perform optimally when dealing with high frequencies. Additionally, it has an N-channel feature, meaning it conducts current when a negative voltage is applied to the gate. This makes it especially suitable for RF applications, since the currents carried by these radio signals are often negative.

Overall, the 275-501N16A-00 is a great model of FET suitable for RF applications. Its features, such as its large capacity and N-channel feature, make it ideal for signal amplification. Its use in RF amplifiers ensures that users are able to get more signal strength and greater clarity from their communications devices.

The specific data is subject to PDF, and the above content is for reference

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