2DA1774Q-7-F Allicdata Electronics
Allicdata Part #:

2DA1774Q-7-F-ND

Manufacturer Part#:

2DA1774Q-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 50V 0.15A SOT523
More Detail: Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 150m...
DataSheet: 2DA1774Q-7-F datasheet2DA1774Q-7-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Base Part Number: 2DA1774
Description

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2DA1774Q-7-F is a type of bipolar junction transistor (BJT), which is a semiconductor device made of three layers of a solid state material. The three layers are called the base, emitter, and collector. Bipolar transistors are a type of transistor, which allows current to flow through it when a small electric signal is applied to the base. These transistors can be classified as NPN or PNP, with the 2DA1774Q-7-F being an NPN.

The 2DA1774Q-7-F can be used in a variety of different applications. It is most commonly used in amplifiers, current mirrors, and switching applications. In amplifiers, it is used to control the flow of power from one circuit to another, while in current mirrors, it is used to accurately mirror one current to another. In switching applications, it is used to control the flow of power from one circuit to another.

The working principle of the 2DA1774Q-7-F is based on the voltage applied to the base, which then affects the current flow between the emitter and the collector. When a small voltage is applied to the base, this causes a change in the level of current that is flowing through the emitter-collector circuit. This is because the voltage applied to the base causes electrons to move in the emitter-collector circuit, thus allowing current to flow. The amount of current flowing through the emitter-collector circuit can be controlled by changing the voltage applied to the base.

The 2DA1774Q-7-F has several features that set it apart from other transistors. It is able to operate at high power levels and at high frequencies, making it suitable for use in high-performance applications. Additionally, it has low input capacitance and low noise, making it suitable for use in signal processing circuits. It also has a high BT gain, making it suitable for use in radio-frequency circuits.

The 2DA1774Q-7-F is a very versatile type of transistor. It is suitable for use in a wide range of different applications, from amplifiers and current mirrors to signal processing and radio-frequency applications. It is also able to operate at high power levels, high frequencies, and with low noise, making it suitable for a variety of different uses. This makes it a great choice for many different projects and applications.

The specific data is subject to PDF, and the above content is for reference

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