2DA1774Q-7 Discrete Semiconductor Products |
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Allicdata Part #: | 1034-2DA1774QDICT-ND |
Manufacturer Part#: |
2DA1774Q-7 |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 50V 0.15A SOT-523 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 150m... |
DataSheet: | 2DA1774Q-7 Datasheet/PDF |
Quantity: | 2358 |
1 +: | $ 0.23310 |
10 +: | $ 0.18963 |
100 +: | $ 0.10042 |
500 +: | $ 0.06609 |
1000 +: | $ 0.04494 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
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The 2DA1774Q-7 belongs to the family of bipolar junction transistors (BJTs). It is a single transistor device that is used in a variety of applications. This article will discuss the device’s application field and its working principle.
2DA1774Q-7 is generally used as a switching device in a number of applications such as audio amplifiers, RF amplifiers, frequency mixers, voltage regulators and other electronic equipment where switching or amplification is required. This device can also be used in a range of drive circuits, power supplies, and power management systems. It can also be used in circuits as an audio driver, amplifier, or switch. The device is designed to offer high speed and performance, enabling features such as low power consumption and fast response times.
The 2DA1774Q-7 is constructed using a planar epitaxial construction technique, which is commonly used in BJTs. In this design, a base layer is constructed and an emitter layer is placed on top. The N- and P-types are formed during the deposition process. An N-type layer is formed between the base and the emitter, and a P-type layer is created between the base and the collector. The collectors are then connected towards the power supply.
When a voltage is applied to the base, it induces a current in the underlying N-type layer, creating free charge carriers. These free carriers then travel through the base layer and cross the N-P junction formed, causing an increase in current flow, resulting in a voltage drop across the emitter-collector junction. This results in a current amplification, as the amplified current flows through the transistor’s collector. This current is then used to drive a load connected to the collector. The current amplification effect, or gain, of the 2DA1774Q-7 transistor is determined by the relation between the voltage applied to the base and the current flowing through the collector.
The 2DA1774Q-7 transistor is suitable for applications that require switching or amplification. It offers a high-performance design and low power consumption, making it an attractive choice for many applications. The device is relatively simple to use, and there are a variety of circuit specifications available.
The specific data is subject to PDF, and the above content is for reference
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2DA1774R-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PNP 50V 0.15A SOT-5... |
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2DA1774Q-7 | Diodes Incor... | 0.26 $ | 2358 | TRANS PNP 50V 0.15A SOT-5... |
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