2DD1664Q-13 Discrete Semiconductor Products |
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Allicdata Part #: | 1034-2DD1664QDITR-ND |
Manufacturer Part#: |
2DD1664Q-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 32V 1A SOT89-3 |
More Detail: | Bipolar (BJT) Transistor NPN 32V 1A 280MHz 1W Surf... |
DataSheet: | 2DD1664Q-13 Datasheet/PDF |
Quantity: | 2500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 3V |
Power - Max: | 1W |
Frequency - Transition: | 280MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
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。2DD1664Q-13 is a transistor from a family of common bipolar junction transistors (BJT) used in many digital and analog circuits.
BJT transistors are so far one of the most popular integrated circuit components in the electronics industry. A BJT transistor is composed of two PN junctions composed of three elements, the emitter, base and collector. The 2DD1664Q-13 has 2 PNP transistors.
This type of transistor has a common collector configuration and is used to amplify the current flowing from the emitter to the collector. This transistor consists of three terminals, the collector, base and emitter, where the current flows from the collector to the emitter and is amplified by the base.
The 2DD1664Q-13 is a general-purpose bipolar transistor that can be used in a wide range of applications such as switching circuits, amplifier circuits, driver circuits, power supplies and motor control circuits. It has high current gains, low noise and high reliability, making it an ideal component for use in many commercial applications.
The working principle of the 2DD1664Q-13 is based on the fact that a voltage applied between the base and the emitter can control the current flowing from the collector to the emitter. The base-emitter voltage induces a current from the collector to the emitter. The collector current can be varied by controlling the base-emitter voltage. When the base-emitter voltage is increased, more current flows through the transistor and vice versa.
In the 2DD1664Q-13, the gain of the transistor is determined by the current flowing through it. This current is commonly referred to as the ‘collector current’ or ‘drain current’. The gain, or Early voltage, of the transistor determines how much current will be amplified. The higher the gain, the greater the current amplification.
The 2DD1664Q-13 is designed to be used at higher currents than other transistors in its class and can handle up to 500mA of collector current. This makes it suitable for high-current applications such as switching power supplies, motor control circuits and amplifier circuits. It has a wide operating voltage range of 12V to 80V, making it suitable for use in many different applications.
The 2DD1664Q-13 is a popular component for many commercial and industrial applications. It is a reliable and efficient transistor, and its wide range of applications make it an ideal choice for use in many circuits. With its high current gains, low noise, and wide operating voltage range, it is sure to meet the needs of any circuit project.
The specific data is subject to PDF, and the above content is for reference
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