2DD1766R-13 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	32V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 500mA, 3V
Power - Max:	1W
Frequency - Transition:	220MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3
Base Part Number:	2DD1766

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2DD1766R-13 Application Field and Working Principle

Introduction

2DD1766R-13, which belongs to the family of single bipolar junction transistors (BJT), can be used in both analog and digital circuits and is suitable for various applications as defined in this article. Hereinafter, the application field and the working principle of 2DD1766R-13 will be discussed in detail.

Application Field

Generally speaking, 2DD1766R-13 can be utilized in various circuits, such as low power amplifier, the automatic gain control circuit, electronic ballast, and so forth.For low power amplifier, it does not need any additional device because of its low voltage, low waveform distortion, high current gain, low noise, and small size. In addition, this type of transistor also has a wide range of power output capability and therefore can be a great choice for building a low power amplifier. Besides, it can also be adopted in the building automatic gain control circuit and electronic ballast. In the case of automatic gain control circuits, the transistor acts as a switch to cut off or turn on the power output to achieve an ideal signal output. Furthermore, its low voltage and low current can make less power loss in both temperature and voltage. As for its application in an electronic ballast, it has a strong durability and can operate stably in wide range temperature due to its excellent thermal characteristics.

Working Principle

2DD1766R-13 is a pnp bipolar junction transistor which is composed mainly by three terminals - emitter, collector and base - with different voltage and current. Briefly speaking, the working principle of 2DD1766R-13 is that the electricity flows from the collector to the emitter, and the base determines the electricity flow rate.In particular, when the electricity is applied to the base terminal, the electrons will be activated and injected into the base region of the transistor. Under the action of the built-up base-collector electric field, the electrons accelerated in the base region across the junction to the collector side. At the same time, the holes left in the base area move to the emitter region under the attraction of the built-up base-emitter electric field. In summary, the electrons move from emitter to collector and holes move from collector to emitter. It is worth noting that, by changing the potential applied to the base, the switching characteristics can be easily controlled and a wide range of power output capability can be obtained, making this type of transistor an ideal rapid switching device.

Conclusion

2DD1766R-13 is a type of single bipolar junction transistor that is suitable for a wide range of applications. The application field includes the low power amplifier, the automatic gain control circuit, and the electronic ballast. As for its working principle, it relies on the flow of electrons from the emitter to the collector, and of the holes from the collector to the emitter, under the action of the built-up base-collector and base-emitter electric field. Moreover, its switching characteristics can be easily controlled and a wide range of power output capability can be obtained by changing the potential applied to the base.

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