Allicdata Part #: | 2E12UM-ND |
Manufacturer Part#: |
2E12UM |
Price: | $ 24.95 |
Product Category: | Uncategorized |
Manufacturer: | Altech Corporation |
Short Description: | 2E12UM 12A CIRCUIT BREAKER E CHA |
More Detail: | N/A |
DataSheet: | 2E12UM Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 22.68000 |
Series: | * |
Part Status: | Active |
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2E12UM is a type of IGBT device which can be used for a wide range of applications. This device is commonly used in manufacturing, automotive, aerospace, and professional applications. It has a high current rating and is capable of operating at high frequencies. In addition, the device has a robust power rating and low switching losses. These features make it an ideal choice for high performance applications.
The device is commonly used for power switching in applications such as voltage regulators, switched-mode power supplies, electronic ballasts, and DC/DC converters. It can also be used as an amplifier or driver for high power semiconductor devices, such as power amplifiers and high power transistors. Additionally, it can be used to drive gate turn-off thyristor modules.
The 2E12UM can operate either at low frequencies of up to 600 kHz or at high frequencies of up to 1.8 MHz. It is capable of driving small and large loads and can control a variety of loads such as resistive, inductive, and capacitive. In addition, the device has low conduction losses, high operating frequencies, and a wide range of output power.
The device has a silicon-controlled rectifier (SCR) gate drive circuit which is used to control the switching of the IGBT device. The gate circuit provides the required gate voltage for the IGBT device to turn on and off, and it can also provide inrush current protection. This feature ensures that the device can withstand fault currents and increases the overall reliability of the device.
The device also has a gate driver circuit which is used to protect the IGBT device against short-circuit and overvoltage. The device has a fast turn-off time and a short rise time for high speed applications. The integrated circuit also includes an overvoltage protection circuit to protect the IGBT device.
The 2E12UM has been designed for easy integration into different system architectures. It can be easily adapted to any application and can be integrated with different types of peripherals such as sensors, current probes, and current measurement devices. This device is also available in a wide range of sizes and package types, and it can be configured to meet the specific requirements of any application.
Overall, the 2E12UM is a versatile device which is suitable for a wide variety of applications. Its high current rating, fast switching speeds, and robust power rating make it an ideal choice for high performance applications. It is also easy to integrate into any system, and its integrated gate drive and protection circuits provide reliable operation.
The specific data is subject to PDF, and the above content is for reference
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