2EZ14D10E3/TR8 Allicdata Electronics
Allicdata Part #:

2EZ14D10E3/TR8-ND

Manufacturer Part#:

2EZ14D10E3/TR8

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 14V 2W DO204AL
More Detail: Zener Diode 14V 2W ±10% Through Hole DO-204AL (DO-...
DataSheet: 2EZ14D10E3/TR8 datasheet2EZ14D10E3/TR8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.48620
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 14V
Tolerance: ±10%
Power - Max: 2W
Impedance (Max) (Zzt): 5.5 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 10.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ14
Description

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The 2EZ14D10E3/TR8 is a single Zener diode from NXP Semiconductors. It is a popular choice for general purpose usage and can be used in a wide range of circuit designs. This article will discuss the application field and working principle of the 2EZ14D10E3/TR8 diode. The 2EZ14D10E3/TR8 diode is designed for use as a voltage regulator. It is designed to have a breakdown voltage of 8.0 volts. This allows it to be used as a series regulator, where current is maintained at a constant level, over a range of input voltages. The maximum reverse leakage current is an impressive 5mA, making the 2EZ14D10E3/TR8 a suitable choice for use with sensitive electronics. The 2EZ14D10E3/TR8 also has a maximum surge current rating of 30mA. This makes it suitable for use in voltage spike protection in a variety of circuits. Its peak inverse voltage rating is 7.0 volts, meaning it can be safely utilized in high voltage applications. The 2EZ14D10E3/TR8 diode features a very fast response time, allowing it to react quickly to current surges. Its small dimensions of 4.85 x 2.9 mm makes it a good choice for use in small circuits are space is limited. The working principle of the 2EZ14D10E3/TR8 diode is similar to that of other Zener diodes. It is constructed out of a single layer of p-type semiconductor material. When the cathode side of the diode is connected to a positive voltage, the junction between it and the n-type material becomes forward biased. This creates a flow of electrons from the n-side to the p-side, thus allowing current to flow. When the reverse voltage across the diode exceeds the breakdown voltage, the diode breaks down, allowing a large current to flow. This is known as ‘avalanche breakdown’. The resulting increase in current causes the junction to become more forward biased, which further increases the current flow. This helps to limit the voltage across the diode, thus acting as a voltage regulator. Since the 2EZ14D10E3/TR8 is a single Zener diode, it is suitable for use as a low-voltage regulator. It can be used to protect sensitive circuitry from voltage spikes and to maintain a constant voltage over a range of input voltages. It is also suitable for use in high voltage applications due to its peak inverse voltage rating of 7.0 volts. In conclusion, the 2EZ14D10E3/TR8 Zener diode from NXP Semiconductors is a versatile and useful device. It features a large maximum reverse leakage current of 5mA and a peak inverse voltage rating of 7.0 volts. Its small size and fast response time make it suitable for use in a variety of applications. Its breakdown voltage of 8.0 volts makes it well-suited for use as a series regulator in order to maintain a constant voltage over a range of input voltages.

The specific data is subject to PDF, and the above content is for reference

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