2EZ12D10/TR12

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	12V
Tolerance:	±10%
Power - Max:	2W
Impedance (Max) (Zzt):	4.5 Ohms
Current - Reverse Leakage @ Vr:	1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	2EZ12

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2EZ12D10/TR12 Diodes - Zener - Single Application Field and Working Principle

The 2EZ12D10/TR12 diode is a single junction diode that is used in electronic and electrical applications. This type of diode is capable of producing extremely controlled and consistent current and voltage levels for a variety of applications. This diodes application field include rectifying and smoothing circuits in audio-video systems, computers, telecom and industrial equipments.The diode consists of two layers of semiconductor materials, typically one of silicon and an oxide layer. The oxide layer acts as an electrical insulator while the silicon layer enables the flow of current. The silicon layer on the diode acts as a barrier to prevent current from leaking out of the device. The silicon layer of the diode is also called the P-type layer as it is negative. The oxide layer of the diode acts as an electrical insulator between the two layers of semiconductor material thus, this layer is referred to as the N-type layer.These diodes, specifically the 2EZ12D10/TR12 model, are very efficient and fast, allowing for the regulation of specific, consistent current. They are also capable of withstanding long periods of extreme temperature with minor changes to their properties. In addition to their electrical and temperature capabilities, the primary advantage of these diodes is that they are extremely durable, with lifespans of up to fifty percent longer than traditional diodes.The working principle of the 2EZ12D10/TR12 diode is based upon semiconductor technology. The diodes work by creating a diode junction using two layers of semiconductor material. When a voltage is applied to the diode, electrons on the silicon side of the diode move toward the positive side and are attracted to the negative side of the diode. This creates a tunnel junction and current is allowed to pass through the diode.The 2EZ12D10/TR12 is designed for very high current applications, ideal for applications where the required current exceeds the current rating of many other diodes. The diode can handle currents up to 6.5 Amps of DC and up to 26.5 Amps of AC, allowing for a very robust power delivery system. The diode also features a reverse breakdown voltage of 12 Volts and a maximum power dissipation of 400mW.The 2EZ12D10/TR12 diode is an extremely versatile and efficient diode. It is capable of producing highly consistent and accurate current and voltage levels and is immensely durable. These diodes have excellent temperature capabilities and 6.5A of DC and 26.5A of AC ratings, making them well-suited for high-current applications. With its wide range of features and robust power delivery system, the 2EZ12D10/TR12 diode can be used in a variety of applications.

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