2EZ3.9D10/TR8 Datasheet/PDFDiodes form an important component in the application of the electrical engineering practice. Zener single diodes are special type of diodes which operate in breakdown region due to the application of reverse bias voltage. The Diaode - Zener - Single 2EZ3.9D10/TR8 is amongst the best selling in its category. This article will discuss the application field and working principle of the 2EZ3.9D10/TR8 diode.
Application
The 2EZ3.9D10/TR8 diode finds wide ranging application in various electrically driven devices such as cellular phones, computers, displays and other electronic gadgets. It is extensively used in voltage regulation in power supplies, voltage clamping and signal detection. An exemplary use of this single zener diode is for reverse voltage protection in low voltage signal switching circuit.
Principle of Operation
A single zener diode is designed to operate in the reverse breakdown region. This feature is achieved by doping the p-n junction of the silicon wafer of the diode heavily with impurities. The doping of impurities causes the junction to become very thin and weak. Thus, when a reverse bias is applied to the diode it immediately breaks down and the current flows across the junction.
The breakdown voltage of the diode is dependent on the current. This is an important feature of the device. The maximum breakdown voltage is dependent upon the current of the reverse bias applied. Thus, with the increasing current the breakdown voltage increases and so does the power dissipation of the junction. As the power dissipation increases the junction temperature increases which in turn reduces the breakdown voltage of the junction.
The reverse breakdown voltage of the 2EZ3.9D10/TR8 diodes is in the range of 3.9 to24 volts. This is the designated requirement of most of the devices or systems. The diode requires very little of power to operate and can withstand a maximum current of 75 mA.
Conclusion
The two major applications of the 2EZ3.9D10/TR8 diode are in voltage regulation and voltage clamping circuits. The diode also finds application in signal detection, reverse voltage protection and switching circuits. This device offers an excellent reliability, low power consumption and good temperature stability. The device can withstand a maximum reverse bias voltage of 3.9-24 volts and a maximum current of 75 mA. All the factors considered make it a preferred choice for many devices or systems.