2EZ56D10E3/TR12 Allicdata Electronics
Allicdata Part #:

2EZ56D10E3/TR12-ND

Manufacturer Part#:

2EZ56D10E3/TR12

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 56V 2W DO204AL
More Detail: Zener Diode 56V 2W ±10% Through Hole DO-204AL (DO-...
DataSheet: 2EZ56D10E3/TR12 datasheet2EZ56D10E3/TR12 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.45379
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 56V
Tolerance: ±10%
Power - Max: 2W
Impedance (Max) (Zzt): 55 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 42.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ56
Description

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2EZ56D10E3/TR12 Diodes - Zener - Single Application Field and Working Principle

The 2EZ56D10E3/TR12 diode series is one type of zener diode--a semiconductor device that is typically used to generate a highly regulated negative or positive voltage, or to protect electrical components from voltage and current overload. The 2EZ56D10E3/TR12 diodes are part of “Surface Mount Package” (SMP) and are used in a variety of electronic devices, such as chargers, power supplies, cameras, computers, and mobile phones.A zener diode consists of two junction diodes placed in series—a cathode and an anode. The diodes are mounted on a substrate, usually semiconductor material such as silicon, with contacts attached to the anode and cathode to form a circuit. When reverse bias voltage is applied to the diode, it becomes conductive, allowing current to flow in both directions.When the forward current exceeds a certain level, the applied voltage comes into effect and the voltage across the diode increases until it reaches a certain point. This point is known as “breakdown voltage” and it determines the zener voltage (VZ). The zener voltage of the 2EZ56D10E3/TR12 has a range from 9.1 to 10.2 V.The main application field of the 2EZ56D10E3/TR12 is for voltage regulation or generation in portable devices, as it has very low power dissipation, efficient heat dissipation, and is compatible with a wide variety of packages. It can also be used for voltage spike protection, current limiting, and temperature compensation.Generally speaking, the working principle of the 2EZ56D10E3/TR12 diode is based on the physical structure of the diode. When it is reverse biased, a small electric field is created between the two diodes and when the field grows to a certain point it will cause the junction to break down, allowing current to flow. This is known as the Zener Breakdown phenomenon.Once the breakdown voltage has been reached, the applied voltage will not increase even if the current increases, thus maintaining a constant voltage known as the Zener Voltage. The 2EZ56D10E3/TR12 diode can also be used in circuits with high input impedance, providing a low-cost, low-power solution for constant voltage regulation.In applications where higher power dissipation is required, the 2EZ56D10E3/TR12 zener diodes can also be used in combination with linear regulators and other power semiconductor components such as MOSFETs and IGBTs. By combining the two components, a more efficient and robust regulating solution can be achieved.In short, the 2EZ56D10E3/TR12 diode series is one of the most reliable and versatile solutions for voltage regulation and generation in many electronic devices. It has a wide operating temperature range and is capable of providing a stable voltage output with low power dissipation. The 2EZ56D10E3/TR12 zener diodes can be used with linear regulators and other semiconductor components for a more efficient and reliable power regulation solution.

The specific data is subject to PDF, and the above content is for reference

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