2EZ56D5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	56V
Tolerance:	±5%
Power - Max:	2W
Impedance (Max) (Zzt):	55 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 42.6V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	2EZ56

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2EZ56D5 Description:

2EZ56D5 is a single Zener diode, which has a voltage of 5.6 Volts. It is miniaturized, low-noise, and has an insulated package design. This diode is capable of operation at temperatures between -55°C and +125°C, and it is suitable for applications with a variety of current levels up to the maximum rated power dissipation. The semi-conductive material is of high quality, making it very reliable for long-term operation. With an optimized junction field effect transistor (JFET) technology, 2EZ56D5 displays better junction capacitance and maximum avalanche energy characteristics than its standard type equivalents.

2EZ56D5 Application Field:

The 2EZ56D5 can be used in a range of applications where a low forward voltage drop, high efficiency and high speed are necessary. Commonly, this diode is used in voltage regulation, voltage clamping and wave-shaping. It can also be used in consumer electronics, as well as in automotive and industrial fields. In consumer electronics it can be used in switching power supplies to regulate the voltage source and in voltage clamping operations to protect circuitry from overvoltages. The Zener’s high speed switching characteristics make it suitable for use in switching power supplies and in wave-shaping circuits. Additionally, in automotive applications, the diode can be used for pulsed power regulation and noise immunity.

2EZ56D5 Working Principle:

The 2EZ56D5 is a voltage-regulating device with a breakdown voltage of 5.6Volts. This breakdown is adjustable and it is set at the Zener voltage, which is the same as the breakdown voltage. The diode has a relatively weak reverse voltage with a high reverse leak current. When a voltage higher than the Zener Voltage is applied, a breakdown occurs, resulting in a surge of current that passes through the device. This current produces a voltage drop across the device, and it is dependent on the resistance of the load. When the load resistance is large, the current is higher and the voltage drop across the diode is also higher. In addition, the device contains a finite minority carrier recombination time, so that when the reverse voltage is increased, a sharper breakdown occurs, making the voltage drop almost constant.

The 2EZ56D5 diode features optimized junction field effect transistor (JFET) technology as well as a maximum avalanche energy, making it suitable for a variety of applications with high speed operation. At the Zener voltage, the current passing through the device is low and close to the breakdown level. This low current allows the device to operate in a low-noise environment, making it ideal for voltage regulation, voltage clamping and wave-shaping. Additionally, it has a wide dynamic resistance range, allowing it to work with high-amplitude current pulses.

Due to its small size, low noise characteristics and insulated package design, the 2EZ56D5 is a reliable and efficient Zener diode for applications of various power levels. With its optimized JFET technology and maximum avalanche energy, this diode is ideal for voltage regulation, voltage clamping and wave-shaping, making it suitable for both consumer electronics and automotive/industrial applications.

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