2EZ6.8D10/TR8 Allicdata Electronics
Allicdata Part #:

2EZ6.8D10/TR8-ND

Manufacturer Part#:

2EZ6.8D10/TR8

Price: $ 1.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 6.8V 2W DO204AL
More Detail: Zener Diode 6.8V 2W ±10% Through Hole DO-204AL (DO...
DataSheet: 2EZ6.8D10/TR8 datasheet2EZ6.8D10/TR8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.94000
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±10%
Power - Max: 2W
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ6V8
Description

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2EZ6.8D10/TR8 Application Field and Working Principle

Introduction to 2EZ6.8D10/TR8

2EZ6.8D10/TR8 is a type of single Zener diode designed and manufactured by the reputed Taiwan semiconductor company Defond Semiconductor. 2EZ6.8D10/TR8 diode is a low-power device that is used for frequency regulation and EMI/RFI protection. The device is hermetically sealed in an axial SOD-323 case and has an electrical rating of 6.8 Volts at 0.2 Amps. It features a low reverse leakage current and a high breakdown voltage. The maximum peak voltage is 12.5V, while the thermal resistance is 110°C/W.

Working Principle of 2EZ6.8D10/TR8

2EZ6.8D10/TR8 works on the principle of a Zener diode. A diode can, by definition, conduct current in the forward direction and block current in the reverse direction. However, when the reverse voltage exceeds the Zener breakdown voltage, the reverse current flows the Zener region and this process is known as Zener breakdown. Therefore, the Zener diode allows current to flow in the reverse direction when the voltage is greater than its breakdown voltage.The 2EZ6.8D10/TR8 is a single Zener diode device. It has a PN junction between two semiconductor materials. The two materials are N-type semiconductor and P-type semiconductor. It has a very thin layer of the semiconductor junction. The thickness of the diode layer is in the order of nanometers. Whenever a voltage is applied to the diode, the electric fields are created which force the electrons and holes to move in the junction in opposite directions. This causes a current flow through the diode.At the PN junction, if the applied voltage is less than the Zener breakdown voltage of the device, the doping concentration of the P-side and N-side is the same, and therefore, the current flow is blocked. However, when the applied voltage exceeds the Zener breakdown voltage, an avalanche breakdown effect occurs, resulting in a high current flow through the diode. Therefore, the 2EZ6.8D10/TR8 diode can be used to limit the reverse current in a circuit.

Application Field of 2EZ6.8D10/TR8

2EZ6.8D10/TR8 diodes are used in a variety of applications including frequency regulation and EMI/RFI protection. They are also used in circuits that require stabilization of the voltage and current in the digital and analog circuits. The diodes are used in voltage clamping and voltage regulation circuits.In frequency regulation applications, the 2EZ6.8D10/TR8 diodes are used to stabilize the circuits and provide a steady output frequency. The device is also used in EMI/RFI protection systems to prevent high-frequency signals from interfering with other signals.In digital and analog circuits, the 2EZ6.8D10/TR8 diodes are used to stabilize the voltage and current. The diodes provide a constant bias voltage across the load, preventing any sudden fluctuations in the load current. The diodes can also be used in voltage clamping circuits, to protect against voltage spikes and overloads.The 2EZ6.8D10/TR8 diodes are also used in various consumer electronics products such as DVD players, computers and mobile phones to protect against voltage surges, EMI/RFI, and high frequency noise. The diodes are also used in automotive electronics such as ECUs, ignition systems and car radios to protect against unexpected voltage or current transients.

Conclusion

2EZ6.8D10/TR8 diodes are widely used for their low-power and high breakdown voltage characteristics. The device is hermetically sealed in an SOD-323 case and is used in frequency regulation and EMI/RFI protection applications. It is also used in circuits that require stabilized voltage and current. The diodes are also used in a variety of consumer electronics products and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

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