Allicdata Part #: | 2EZ6.8D10E3/TR12-ND |
Manufacturer Part#: |
2EZ6.8D10E3/TR12 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6.8V 2W DO204AL |
More Detail: | Zener Diode 6.8V 2W ±10% Through Hole DO-204AL (DO... |
DataSheet: | 2EZ6.8D10E3/TR12 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.45379 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±10% |
Power - Max: | 2W |
Impedance (Max) (Zzt): | 2 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 4V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Base Part Number: | 2EZ6V8 |
Description
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2EZ6.8D10E3/TR12 Diodes - Zener - Single Application Field and Working Principle
The 2EZ6.8D10E3/TR12 Zener diode, offered by TDK Corporation, is a single component, which uniquely combines the features of conventional Zener diodes with ultra-low capacitance, low noise and low power consumption. The features of the 2EZ6.8D10E3/TR12 make it suitable for use in many applications, such as voltage regulation and rf signal bypass. The 2EZ6.8D10E3/TR12 Zener diode is designed with a low-power forward voltage drop of 0.2 V, a low-noise noise factor of 0.4 V, and an ultra-low capacitance of 1 pF. This makes the device suitable for use in many low-voltage applications, such as in low voltage voltage regulation and signal bypass. Additionally, the 2EZ6.8D10E3/TR12 offers a high speed settling time of just 5 ns, making it ideal for fast response applications where quick response time is key.The 2EZ6.8D10E3/TR12 Zener diode has a maximum reverse voltage of 8 Volts and a voltage coefficient of 0.2%. This allows for a wide range of use, particularly as a regulator or signal bypass. It is also suitable for use in high voltage protection, low voltage and low current protection, and in low power TV protection systems. The 2EZ6.8D10E3/TR12 Zener diode is suitable for use in a wide range of temperatures, from -55° to +125°C, making it suitable for both hot and cold environments. It is also resistant to stresses caused by voltage transients and is capable of withstanding up to 15 volts in open-circuit conditions. This makes it suitable for use in a range of applications, such as in high-reliability systems. The working principle of the 2EZ6.8D10E3/TR12 Zener diode is based on a simple electrical effect known as a Zener breakdown. When the reverse voltage across the diode exceeds the Zener’s breakdown voltage, a large current will flow, even though the voltage across the diode remains constant. This effect is utilized in the 2EZ6.8D10E3/TR12 by the regulation of the forward current in order to stabilize the supply voltage. In this way, the 2EZ6.8D10E3/TR12 can be used to provide protection against over-voltage, as well as for voltage control. In summary, the 2EZ6.8D10E3/TR12 Zener diode is a single component which combines the features of traditional Zener diodes with low capacitance, low noise and low power consumption. It is suitable for use in a variety of applications, from voltage regulation and signal bypass to high-reliability systems. The working principle of the device is based on a Zener breakdown effect, which is used to control the forward current in order to stabilize the supply voltage.The specific data is subject to PDF, and the above content is for reference
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