2EZ6.8D2E3/TR12

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	6.8V
Tolerance:	±2%
Power - Max:	2W
Impedance (Max) (Zzt):	2 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 4V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	2EZ6V8

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What is 2EZ6.8D2E3/TR12?

2EZ6.8D2E3/TR12 is a type of single zener diode which is made by the manufacturer, ON Semiconductor. It is a silicon planar epitaxial diode which is known for its low forward voltage drop, low leakage current, low capacitance, and high reverse breakdown voltage. In other words, it is a highly reliable diode with its very low forward voltage blocking capability and high reverse breakdown characteristic.

Application Field of 2EZ6.8D2E3/TR12

2EZ6.8D2E3/TR12 has a wide range of applications in various sectors. It is mainly used in power supply systems, voltage regulation, clamping circuits, and over current detection circuits. It can also be used in TV/monitor protection circuits, over voltage protection, thermal protection for LED lighting, etc.

Working Principle of 2EZ6.8D2E3/TR12

The working principle of 2EZ6.8D2E3/TR12 is based on the principle of the Zener diode. A Zener diode or a breakdown diode is a type of diode which permits the flow of reverse current when its reverse voltage reaches a certain breakdown voltage. This breakdown voltage is determined by the doping concentration of the PN junction. In the case of 2EZ6.8D2E3/TR12, it has a reverse breakdown voltage of 6.8V.When a voltage is applied to the anode of the 2EZ6.8D2E3/TR12, the PN junction of the diode gets forward biassed and the diode passes the current through it. When the reverse biassed voltage reaches the breakdown voltage of 6.8V, the diode starts to conduct in reverse direction and clamps the voltage to its breakdown voltage. This way, it protects the other components of the circuit from over voltage and over current.Apart from its use as a voltage clamping device, it can also be used as a temperature compensation device. In this case, the breakdown voltage of the diode changes slightly with the change in temperature. This change in voltage can then be used to compensate for other changes in the circuit due to temperature changes.

Conclusion

2EZ6.8D2E3/TR12 is an excellent diode for protecting circuits and components from over voltage and over current. It is widely used in a variety of sectors and applications due to its high reverse breakdown voltage, low leakage current and capacitance, and low forward voltage drop characteristics. In addition to being used as a voltage clamping device, it can also be used as a temperature compensation device.

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