2EZ91D5E3/TR12 Allicdata Electronics
Allicdata Part #:

2EZ91D5E3/TR12-ND

Manufacturer Part#:

2EZ91D5E3/TR12

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 91V 2W DO204AL
More Detail: Zener Diode 91V 2W ±5% Through Hole DO-204AL (DO-4...
DataSheet: 2EZ91D5E3/TR12 datasheet2EZ91D5E3/TR12 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.44651
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 91V
Tolerance: ±5%
Power - Max: 2W
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 69.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ91
Description

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The 2EZ91D5E3/TR12 is a single zener diode, characterized by its high-voltage and low-current capabilities. It is commonly used in applications such as reverse (flyback) voltage protection and, in the presence of an avalanche diode, can also be used for overvoltage clamping.

This particular diode is capable of sustaining repeated reverse voltages up to at least 200 V, with a maximum DC reverse voltage of about 200V. Commonly used for voltage clamping and flyback protection, the 2EZ91D5E3/TR12 can be applied in circuitry that sees relatively low to moderate fluxes. Maximum pulsed current handling capabilities of this diode can reach 90 A, short-term pulse of 600 A, but only up to 5μs.

This diode is made of silicon and has a tracking-to-ambient temperature coefficient of approximately -6 mV/°C. Other specs include a maximum DC forward voltage drop of 500 mV and a max reverse current of 500 uA.

The working principle of this diode relies on the two charge carriers, electrons and holes, which flow in opposite directions. When the diode is reverse-biased, electrons flow from the p-type material towards the n-type material, and holes flow from the n-type material towards the p-type material. The electric field within the junction is not uniform, such that when the reverse voltage is increased, the average field increases across the junction. This is referred to as the zener breakdown region and it is in this region that the diode exhibits a characteristic breakdown voltage. When the reverse voltage is decreased, the diode reverts to a non-conducting state.

The 2EZ91D5E3/TR12 is commonly used in applications such as reverse voltage clamps, voltage spike suppressors, and transient protection. In some cases, its higher voltage capabilities are an advantage, as it can prevent system-wide power failures in AC power supplies, TV sets and similar applications. As mentioned earlier, when coupled with an avalanche diode, it can be used for overvoltage clamping in both AC and DC circuitry engineering projects.

In short, the 2EZ91D5E3/TR12 is a single zener diode characterized by its high voltage and low current capabilities. It is commonly used in applications such as reverse (flyback) voltage protection, overvoltage clamping, and transient protection.

The specific data is subject to PDF, and the above content is for reference

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