2M11ZHR0G

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The 2M11ZHR0G Zener diode is a single-terminal semiconductor device designed to support over-voltage protection in modern electronic systems. It is designed to protect sensitive electronic equipment from exposure to over-voltage and subsequent destruction of the components. It is found in a variety of applications such as routers, servers, and switches, as well as in automotive, solar, and aerospace applications. The working principle of the 2M11ZHR0G Zener diode is based on a unique property of semiconductors called the Zener effect.

Zener diodes, named after US physicist Charles Zener, are diodes that can be operated in reverse bias (a voltage greater than the diode\'s breakdown voltage) to produce a stable voltage across the diode. The reverse biased diode is under a reverse electric field. This field is strong enough to break down the pn junction and cause carriers (electrons and holes) to flow from the n-type material to the p-type material, a process called Zener breakdown. As the electric field increases, more electrons and holes cross the junction until a balance point is reached. At this balance point, the Zener voltage is established across the junction and the reverse current (which is proportional to the electric field) is kept constant.

In other words, the voltage across the junction remains constant, regardless of the applied reverse voltage. This property of the Zener diode is known as the Zener effect, and it is often used in modern circuits as an over-voltage protection mechanism. The voltage across the Zener diode is called the Zener Voltage (Vz), which is often referred to as a Zener Breakdown Voltage.

The 2M11ZHR0G Zener diode is specifically designed for over-voltage protection. It is a SMA package diode with a maximum power dissipation of 200 mW and a maximum breakdown voltage of 11 V. It is designed to maintain a constant breakdown voltage of 10.2 V (Vz) at a maximum reverse current of 200 mA. The diode also has a low temperature coefficient and reverse recovery time, making it suitable for use in high speed switching designs.

The reverse current of a Zener diode is mainly determined by two parameters: the reverse bias voltage (Vz) and the temperature. The reverse current increases proportionally with temperature, while the breakdown voltage typically decreases with temperature. To ensure a stable voltage operation with temperature change, the Zener diode should be specified within a temperature range that is appropriate for the application. The 2M11ZHR0G Zener diode is a temperature-stable device, which makes it suitable for use in a wide range of applications.

The 2M11ZHR0G Zener diode is widely used as an over-voltage protection device in modern electronic systems. It is designed to protect sensitive electronic components from exposure to voltages higher than their rated values. The diode is designed to maintain a steady breakdown voltage across the diode when exposed to reverse bias, thus preventing the damaged components from further destruction. The device is available in a variety of package sizes for different system requirements and is widely used in routers, servers, and switches, as well as in automotive, solar, and aerospace applications.

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