2N2605

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	30mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Power - Max:	400mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AB, TO-46-3 Metal Can
Supplier Device Package:	TO-46-3

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2N2605 is a NPN grounded emitter, double diffused transistor with an assumed role in the whole electronic circuit and caused a great sensation from its invention. This kind of silicon transistor device is mainly used for high current and low voltage applications. 2N2605 is designed for use in relatively low voltage, high current applications. It can be used in power amplifier and general purpose switching circuit designs. With the wide range of current gain, this device is capable of operating in both saturation and cut-off regions. It can also be used as an effective load switch. 2N2605 can handle currents over a range of several hundred mA or to 100 Watts or more. This makes it an ideal device for high-frequency switching circuits and in complementary symmetry applications. The wide current handling capability makes it suitable for power amplifiers, power control circuits, and high speed logic gates. The main advantage of this device is its low on-state voltage drop and high off-state leakage current, both of which it qualifies for low power dissipation. As a result, 2N2605 can be used in power switching circuitry, power MOSFET drivers, and other switching applications.The basic principle of operation of the 2N2605 transistor is the same as many other types of transistors. It operates following the region of operation (which can be active or cutoff) based on the applied input voltage. When the base-emitter junction is forward biased by the applied input voltage, current will flow from the emitter to the collector. When it’s reverse biased, no current will flow between the emitter and the collector. The region of operation is determined by the bias current flowing into the base-emitter junction.When in forward bias or the active region, the base-emitter voltage will fall close to zero, allowing current to flow from the emitter to the collector, resulting in a collector current to flow. The ratio of collector current to base current is known as current gain, and is denoted by hFE. The value of hFE increases with increasing collector current, and also increases as the reverse bias of the base-emitter junction is increased.The collector voltage (VCE) of the transistor will decrease when placed in the active region. At this point the current gain, denoted by hFE, corresponds to the ratio of collector current to base current. This gain can vary depending on the amount of current flowing through the base-emitter junction of the transistor.The output power of the transistor is determined by the collector current, collector-emitter voltage, and the applied load. When the base current reaches a certain level, the transistor will start to saturate and the collector-emitter voltage will start to reduce. As the load is increased, the transistor will enter the linear region, which is followed by the saturation region and the device will become "fully saturated".In summary, 2N2605 is a NPN grounded emitter, double diffused transistor and is mainly used in high current, low voltage applications in power amplifiers and general purpose switching circuits. It operates following the region of operation (which can be active or cutoff) based on the applied input voltage, and its main advantage is its low on-state voltage drop and high off-state leakage current. With its wide range of current gain, this device can be used as an effective load switch and is also suitable for power amplifiers, power control circuits, and high speed logic gates.

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