Allicdata Part #: | 2N2609MS-ND |
Manufacturer Part#: |
2N2609 |
Price: | $ 8.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | JFETS |
More Detail: | JFET P-Channel 30V 10mA 300mW Through Hole TO-18 (... |
DataSheet: | 2N2609 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 7.59073 |
Series: | -- |
Part Status: | Active |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 5V |
Current Drain (Id) - Max: | 10mA |
Voltage - Cutoff (VGS off) @ Id: | 750mV @ 1A |
Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 5V |
Power - Max: | 300mW |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 (TO-206AA) |
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The 2N2609 is a Junction Field Effect Transistor (JFET), a type of transistor that works as an electronically controlled switch due to its ability to control the flow of charge between two electrodes across a semiconductor material. JFETs are particularly useful for their low noise operation and very high input impedance.
The 2N2609 is a depletion-mode JFET and is made from P-channel silicon to allow the device to operate as an N-channel JFET in a small surface mount package. It is a small signal device, but can handle up to 10 volts and features a maximum power dissipation of 500mW, making it suitable for a range of applications.
The 2N2609 is commonly used in audio and switching applications where high input impedances and low noise operation are important, such as amplifiers, low frequency amplifiers, and switching circuits. It can also be used for small-signal harmonic generation, pulse shaping, and other signal conditioning techniques. With its low capacitance and high transconductance, the 2N2609 can be used for a variety of high frequency applications as well, such as voltage-controlled amplifiers, step recovery diodes, and pulse transformers.
The basic operating principle of the 2N2609 involves altering the conductivity of a semiconductor material between the two electrodes (called the source and the drain) by manipulating the voltage applied to the controlling electrode (called the gate). As the gate voltage is increased, the conductivity of the material decreases, blocking the flow of charge. This can be used to control the current flow in a circuit, and is known as the “Depletion-Mode” of operation.
The 2N2609 is a particular type of JFET, with a gate that is “normally connected” to the drain, unlike other JFETs where the gate is “normally open” and the current only flows when the gate is connected to the source. This allows the device to operate in “Common-Source” configuration, where the current passes through the device when the gate is left open. This makes the 2N2609 ideal for applications where a large adjustable resistance is required.
The 2N2609 is a reliable and versatile device, making it a popular choice for a range of applications that require high input impedance and low noise operation. Its adjustable resistance and wide range of operating voltages make it suitable for both small-signal and high frequency applications. Furthermore, its small size and surface-mount compatibility make it suitable for modern circuit designs.
The specific data is subject to PDF, and the above content is for reference
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