2N2857 Allicdata Electronics
Allicdata Part #:

2N2857CS-ND

Manufacturer Part#:

2N2857

Price: $ 4.89
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 15V 40MA TO-72
More Detail: RF Transistor NPN 15V 40mA 1.9GHz 200mW Through Ho...
DataSheet: 2N2857 datasheet2N2857 Datasheet/PDF
Quantity: 1980
1 +: $ 4.44780
10 +: $ 3.96900
25 +: $ 3.57210
100 +: $ 3.25458
250 +: $ 2.93706
500 +: $ 2.63542
1000 +: $ 2.22264
Stock 1980Can Ship Immediately
$ 4.89
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: --
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N2857 transistor belongs to a family of transistors called Bipolar Junction Transistors (BJTs) and, more specifically, to the Radio Frequency (RF) category. This particular device offers a wide range of applications in the fields of communications, industrial control, medical electronics, and aerospace due to its state-of-the-art features such as small size, high power density, high stability, high efficiency, and low cost. 

The 2N2857 is composed of three pins, namely Base, Collector, and Emitter. It operates in the NPN structure, meaning that the base is positively connected to the emitter and the collector is negatively connected to the emitter. The base is where the electrical current is injected, while the collector and emitter are responsible for solar power. 

The 2N2857 transistor’s working principles can be understood through a theoretical model for the BJTs which is similar to a three-terminal voltage source. Current flows from the collector to the base, from the base to the emitter, and from the collector to the emitter when the transistor is in passive mode. When the transistor is in active mode, however, the base current is controlled, allowing for the control of current between the collector and the emitter. Additionally, the voltage across the collector and the emitter is now higher than the voltage between the base and the emitter. 

The particular device offers a power output of up to 40 Watts and a Gain of -1.2 dB, allowing it to be used in a multitude of applications. For example, the transistor can be employed in radio frequency (RF) systems, as it is a robust, high-efficiency device which can withstand high frequency signals. The particular device can also be employed in medical applications, as it can accurately control the current flow in medical instruments, such as pacemakers and prosthetic limbs. Moreover, it can also be employed in industrial electronics, in order to automate industrial processes and control robotics. 

In conclusion, the 2N2857 is an amazing device that can be employed in a multitude of applications due to its high power, robustness, and efficiency. It has a variety of features that make it suitable for communications, medical, industrial, and aerospace applications. By understanding the principles behind its operation, we can get an idea of the vast amount of possibilities provided by this powerful transistor. 

The specific data is subject to PDF, and the above content is for reference

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