2N2880 Allicdata Electronics
Allicdata Part #:

2N2880-ND

Manufacturer Part#:

2N2880

Price: $ 79.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: PNP TRANSISTOR
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N2880 datasheet2N2880 Datasheet/PDF
Quantity: 1000
100 +: $ 72.63270
Stock 1000Can Ship Immediately
$ 79.9
Specifications
Series: *
Part Status: Active
Description

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2N2880 is a kind of low noise silicon bipolar NPN transistor with metal–oxide–silicon structure and bi-polar technology. It is manufactured by NXP Semiconductors, formerly known as Philips semiconductors. It is best suited for high-frequency applications requiring low noise, low power consumption, and low capacitance. The transistor has a nominal gain of around 80, a maximum collector current of 10 mA and an fT of 40 MHz.

Application Field of 2N2880

The low noise characteristics of the 2N2880 make it ideal for applications where a sharp signal needs to be received with minimal noise interference. It is often used in radio frequency applications, such as cellular phones and radar systems, to help pick up weak signals. It is also used in switching regulator applications where noise is a major concern. Other uses include audio amplifiers, motor controllers and high-speed logic applications.

Working Principle of 2N2880

The 2N2880 is a bipolar junction transistor (BJT) with a single base and two emitters. It is commonly used in small signal applications to amplify electronic signals, such as those used to control motors. The transistor works by using the input current to the base to control the current flow between the two emitters, the collector and the emitter. The emitter supplies the output current (the current flowing out of the transistor) while the collector collects the output current, which is then amplified and sent to the output. The amount of current flowing through the transistor can be regulated and increased or decreased by changing the input current to the base, making the 2N2880 useful in applications requiring precise control and modulation of current.

The 2N2880 can operate in either a common-collector or a common-emitter configuration. In the common-collector configuration, the input voltage is applied to the base and the output voltage is taken from the emitter. This configuration provides a voltage gain between the input and output. In the common-emitter configuration, the input voltage is applied to the emitter and the output voltage is taken from the collector. This configuration provides a current gain between the input and output.

The 2N2880 is also able to handle high currents and power dissipation. This makes it suitable for use in power transistors, where the transistor is used to switch a larger signal or to regulate a higher voltage. It can also handle high switching frequencies, making it invaluable for applications where quick response times are necessary.

Overall, the 2N2880 is a versatile, low noise, and low power consuming NPN transistor with a wide range of applications. It is lightweight, low cost, and available from many suppliers. With the ability to handles high current and frequencies, the 2N2880 is a popular choice in many applications.

The specific data is subject to PDF, and the above content is for reference

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