2N2895

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The 2N2895 is an NPN silicon transistor, which belongs to the single bipolar junction transistor (BJT) family. It is made using a standard planar epitaxial construction to ensure that it is especially suitable for military and space applications. This transistor has an excellent high-frequency capability, with frequency response up to 250 MHz. It exhibits high-temperature stability and performance over a wide temperature range from -65 to 150 °C.

This transistor has a total power dissipation of 625 mW and collector-emitter voltage of 40 V. It utilizes a high-voltage collector-base breakdown voltage of 70 V, and its maximum DC current gain reaches as high as 75. It has gold plated plastic or ceramic packaging which offers excellent thermal and electrical conductivity. This 2N2895 transistor has been optimized to operate up to a VBE max of 4 V, IC max of 200 mA, and PC max of 625 mW.

The working principle of the 2N2895 is based on the flow of electrons from its collector to its emitter. In this process, the electrons coming from the collector are accelerated due to the presence of a strong electric field and are focused using an electric potential. This collected electrons go through a potential barrier and then are attracted towards the emitter due to the presence of an electric field. This results in the production of electrical current which is the main purpose of this transistor.

The 2N2895 can be used in a variety of applications including audio amplifiers, low-noise preamplifiers, pulse and high-frequency amplifiers, and linear amplifiers. It is suitable for automotive electronics and can also be used in motor control applications. It works especially well in applications which require high electrical parameters and it is used in applications which must work reliably under extreme temperature conditions.

The transistor is used for switching and amplifying applications where low noise is of paramount importance. It offers excellent noise performance with low background noise and minimum distortion. The 2N2895 can be used in audio-frequency amplifiers and radio-frequency amplifiers for systems requiring high electrical parameters. It can also be used in telecommunication systems as it provides superior high-frequency performance.

In summary, the 2N2895 is an NPN silicon transistor belonging to the single bipolar junction transistor (BJT) family. It utilizes a high-voltage collector-base breakdown voltage of 70 V, and its maximum DC current gain can reach up to 75. This transistor is made using a standard planar epitaxial construction and is especially suitable for military and space applications. The working principle of the 2N2895 is based on the flow of electrons from its collector to its emitter and it can be used in a variety of applications including audio amplifiers, low-noise preamplifiers, pulse and high-frequency amplifiers, and linear amplifiers.

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