2PC1815GR,116 Allicdata Electronics
Allicdata Part #:

2PC1815GR,116-ND

Manufacturer Part#:

2PC1815GR,116

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 50V 0.15A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 500mW...
DataSheet: 2PC1815GR,116 datasheet2PC1815GR,116 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 500mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2PC1815
Description

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2PC1815GR,116 Application Field and Working Principle

2PC1815GR,116 is a bipolar junction transistor (BJT) which is a type of electronic transistor that uses a combination of either two n-type or two p-type semiconductors to create a circuit. A BJT is one of the three basic transistor types, along with field-effect transistors (FETs) and junction field-effect transistors (JFETs). The 2PC1815GR,116 is an NPN type BJT.

The 2PC1815GR,116 is an ideal choice for applications that require high current flow, low voltage, and high speed. It is highly stable and suitable for use in a variety of amplifying, switching and signal processing applications. The transistor features a low saturation voltage, low noise, and is capable of providing a high degree of isolation. In addition, the 2PC1815GR,116 has a usage temperature range of -55℃ to 150℃, making it suitable for a wide variety of situations.

The 2PC1815GR,116 is most commonly used in applications such as telecommunications and computer systems, RF amplifiers, voltage conversion, switching, and automotive applications. The transistor is available in several packages sizes and power ratings, including TO-18, SOT-323, and SOT-457. It is manufactured by a variety of companies, such as STMicroelectronics, Texas Instruments, and Rohm.

The 2PC1815GR,116 consists of three components: a collector, a base, and an emitter. In an NPN bipolar junction transistor, the collector is connected to the negative voltage source, the base is connected to a positive voltage source, and the emitter is connected to the positive and negative voltage sources. When a small current is applied to the base, it activates the transistor and the current flows from the collector to the emitter. The amount of current flow is determined by the current gain of the transistor.

When designing a circuit with a 2PC1815GR,116, it is important to consider the power supply, the amount of current through the transistor, the operating temperature, and the gain of the transistor. An incorrect application may result in damage to the device or other components in the system.

The 2PC1815GR,116 is a high-performance bipolar junction transistor (BJT) that is suited for many applications requiring strong current gain, low saturation voltage, and high speed. As a single transistor device, the 2PC1815GR,116 is stable and reliable in its application. The device is available in a variety of packages and power ratings, allowing it to be used in a wide range of applications and situations. Careful circuit design and planning is necessary to ensure the 2PC1815GR,116 operates correctly and safely.

The specific data is subject to PDF, and the above content is for reference

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