2PC4081R,115 Allicdata Electronics

2PC4081R,115 Discrete Semiconductor Products

Allicdata Part #:

1727-1959-2-ND

Manufacturer Part#:

2PC4081R,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 50V 0.15A SOT323
More Detail: Bipolar (BJT) Transistor NPN 50V 150mA 100MHz 200m...
DataSheet: 2PC4081R,115 datasheet2PC4081R,115 Datasheet/PDF
Quantity: 6000
3000 +: $ 0.02193
6000 +: $ 0.01978
15000 +: $ 0.01720
30000 +: $ 0.01548
75000 +: $ 0.01376
150000 +: $ 0.01147
Stock 6000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: 2PC4081
Description

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2PC4081R,115 Application Field and Working Principle

The 2PC4081R,115 bipolar junction transistor (BJT) is a general purpose NPN device typically used for switching and amplifier applications. It has three terminals: the base, collector and emitter. It belongs to the Single BJT Transistors category and is used in many electronic circuits.

Product Description

The 2PC4081R,115 features a maximum collector current of 800 mA and a continuous collector current of 400 mA. Its typical DC current gain (hfe) is greater than 75 and its collector-emitter voltage breakdown is 30V. It is composed of PNP and NPN transistors connected in a monolithic form.

Typical Applications

The 2PC4081R,115 is a reliable transistor that can be used for a variety of applications. It is usually used as an amplifier in receivers, televisions and multimedia systems. It is also used to drive motors, coils and relays, control lamps and as an interface between the digital and analog sections of a circuit. In the industrial field, it is often employed for temperature monitoring, pressure measurement and for interfacing PLC in industrial automation.

Working Principle

BJTs are current-controlled semiconductor devices that are generally used to amplify or switch signals and current. The 2PC4081R,115 contains two internally connected transistors, NPN and PNP, connected in a monolithic form. The operation of the 2PC4081R,115 is based on the variation of current flow through the emitter-base junction when a voltage is applied.

When the base-emitter junction is forward biased, the emitter-collector current starts flowing. This current is known as collector current and is amplified by the current gain (hfe). The ratio of collector current to base current determines the current gain of the transistor. The current gain of the 2PC4081R,115 is greater than 75, meaning that the collector current will be amplified by a factor of 75.

The 2PC4081R,115 can also be used for switching applications in which it is biased in cutoff or saturation states. When the collector-emitter voltage drop is equal to or less than 0.2V, the transistor is said to be in cutoff mode, meaning that no current flows between the collector and emitter. When the voltage drop is greater than 0.2V, the transistor is said to be in saturation mode meaning that the collector current is maximum.

Conclusion

The 2PC4081R,115 is a versatile Single BJT Transistor with a wide range of applications. It can be used as an amplifier and as a switch depending on the requirement. Its maximum collector current and continuous collector current ratings are 800 mA and 400 mA respectively. In addition, its current gain is greater than 75 and its collector-emitter voltage breakdown is 30V.

The specific data is subject to PDF, and the above content is for reference

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