Allicdata Part #: | 2PC4617R,135-ND |
Manufacturer Part#: |
2PC4617R,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 50V 0.15A SC-75 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 100MHz 150m... |
DataSheet: | 2PC4617R,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Base Part Number: | 2PC4617 |
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A 2PC4617R,135 is a bipolar n–p–n transistor commonly used in electrical engineering for signal amplification and switching. It is part of a family of transistors called bipolar junction transistors (BJTs), which are classified under a group referred to as single transistors. They are capable of current amplification and voltage switching in electronic circuits, making them one of the most versatile electrical components for various electronics applications.
When compared to other types of transistors such as field-effect transistors (FETs), BJTs have a lesser voltage range, current bandwidth, and lower frequency response. Additionally, BJTs require a small amount of current in the base to control current flow in the collector–emitter circuit. These characteristics make BJTs the preferred transistor of choice in applications where low-voltage control is necessary.
The 2PC4617R,135 is a semiconductor device composed of two p-type and two n-type doped regions that form a three-layer structure as seen in its cross-section. An n-type layer connects the base to the emitter, while a p-type layer connects the base to the collector. When a current is passed through the base, it controls the current flow between the collector and the emitter. This phenomenon, known as bipolar junction, is responsible for the transistor’s high current gain capabilities.
When the base–emitter voltage is low, the transistor is off and remains in this state until the base–emitter voltage reaches a specified level, typically 0.7 volts. This is known as the turn-on voltage. When the base–emitter voltage reaches the turn-on voltage, current flows between the collector and the emitter, allowing the transistor to be in the active mode. This mode allows the 2PC4617R,135 to amplify and switch electronic circuits.
In electronic applications, the 2PC4617R,135 can be used as an amplifier, an analog switch, a logic switch, and for various digital logic circuits. It is particularly suitable for low-voltage analog and logic systems that require high current gain and switching capabilities. The 2PC4617R,135 is widely used in cellular phones, audio systems, digital cameras, and other communication devices, as well as in automotive electronics.
The 2PC4617R,135 is an excellent choice for applications that require high switching rate, low power dissipation, low radiation, and low noise levels. Although it is not suitable for high-frequency applications, its low-voltage and low-power characteristics make it a popular choice for many applications. Overall, the 2PC4617R,135 is a versatile and dependable transistor that is well-suited to a variety of tasks in the field of electrical engineering.
The specific data is subject to PDF, and the above content is for reference
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