2PD1820AS,115 Discrete Semiconductor Products

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2PD1820AS, 115 Application Field and Working Principle

2PD1820AS, 115 is a type of bipolar junction transistor (BJT) from the 2PD series. It is an NPN-type bipolar transistor, meaning it is composed of both a negatively charged region and a positively charged region. For this type of transistor, the N-type region (or emitter) is connected to the negative voltage, while the P-type region (or collector) is connected to the positive voltage. This type of transistor can be used in a variety of applications, ranging from switching, amplifying to audio and power applications.

2PD1820AS, 115 Overview

2PD1820AS, 115 is typically manufactured in a TO-220 package, which makes it suitable for designs where a limited board space is available. In addition, it is also optimized for temperature matching, ensuring that it can achieve high current gain and low noise. 2PD1820AS, 115 is available with maximum ratings of collector-emitter voltage (VCE) of 115V, collector-emitter saturation voltage (VCEsat) of 0.5V, emitter-base voltage (VEBO) of 7V, collector current (IC) of 1.5A, and power dissipation (PD) of 30W.

2PD1820AS, 115 Application Field

Due to its high current gain, low noise, and power dissipation, 2PD1820AS, 115 can be used for a wide range of applications. Common uses for the 2PD1820AS, 115 include switching applications, such as relay driving, solenoid control and lamp switching; amplifier applications for audio or power applications such as amplifying an audio signal or providing power to an LED; and noise reduction applications, as it can be used to improve the quality of an audio signal by reducing noise.

2PD1820AS, 115 Working Principle

The working principle of the 2PD1820AS, 115 is based on the principle of a common BJT. As mentioned previously, it is composed of both a negatively charged region (N-type) and a positively charged region (P-type), which are then connected to positive and negative voltages, respectively.

When a current is applied to the base (negative voltage), the electrons in the N-type region and holes in the P-type region are attracted to each other, creating a current between the emitter and collector. This current is a result of an electron hole recombination, which produces a voltage drop of about 0.7 volts. This voltage drop, called the “cut-off” voltage, is the minimum voltage needed to keep the transistor on and produce a current.

Furthermore, by adjusting the base current, the 2PD1820AS, 115 is able to control the collector-emitter current, allowing it to amplify the input signal. The 2PD1820AS, 115 can be used as an amplifier or a switch depending on the application. When it is used as an amplifier, the output signal is typically larger than the input signal. When used as a switch, the output signal is either 0 or 1, depending on the voltage level of the input signal.

Conclusion

In conclusion, the 2PD1820AS, 115 is a type of bipolar junction transistor in the 2PD series. It is available with maximum ratings of VCE of 115V, VCEsat of 0.5V, VEBO of 7V, IC of 1.5A, and PD of 30W. It can be used in a variety of applications, ranging from switching, amplifying to audio and power applications. Its working principle is based on the principle of a common BJT, where electrons in the N-type region and holes in P-type region are attracted to each other, resulting in current flow between the emitter and collector.

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