Allicdata Part #: | 2PD1820AR/ZLX-ND |
Manufacturer Part#: |
2PD1820AR/ZLX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 50V SOT323 |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2PD1820AR/ZLX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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2PD1820AR/ZLX is a transistor device manufactured by HY Pang Electronics Co. Ltd, based in Shenzhen, China. It is a single Polar, low-noise NPN Bipolar Junction Transistor (BJT). This device has a large current gain and is commonly used in communication, consumer electronic, and telecommunication applications.
This transistor is suitable for use in low-noise amplifier and general switching applications in consumer and professional audio equipment. It is available in an TO-92 and a small SOT-223 package. The 2PD1820AR/ZLX is often used in display driver and op-amp circuits. It is also used in amplifiers, switches, low-noise pre-amplifiers, and power supplies. Due to its low noise figure, the 2PD1820AR/ZLX is also used in front-end systems of medium-power amplifiers and power oscillators.
The 2PD1820AR/ZLX is an NPN Bipolar Junction Transistor, which means that it is composed of three separate layers of semiconductor materials. It is also known as an “NPN Transistor”, because the three layers create an NPN structure. In an NPN structure, one layer is composed of electrons (the “N”), while two other layers consist of holes (the “P”) and the third layer is called an emitter (“E”). Current flows through the base-emitter junction, creating a field effect which changes the characteristics of the device. This field effect is what allows the transistor to amplify current and voltage.
The 2PD1820AR/ZLX has a maximum current gain of 900, with a collector-emitter saturation voltage of around 2.1 Volts at a collector current of 100mA. It has an operating temperature range from -55°C to 85°C. At a collector current of 4mA, the device has a maximum collector-base breakdown voltage of 20 Volts. Its typical forward current is 10 microamperes, with a maximum reverse leakage current of 25 nanoamperes. Furthermore, its peak forward current is 500 milliamps. These characteristics make the 2PD1820AR/ZLX suitable for communications applications where low-noise and high levels of performance are required.
The working principle of the 2PD1820AR/ZLX is based on the fact that it is an NPN transistor. When current is supplied to the base, it creates a field effect in the emitter-collector region. This field effect causes electrons to flow from the emitter to the collector, creating an amplified current. This is the basic principle of operation for all NPN transistors, and the 2PD1820AR/ZLX is no exception.
In summary, the 2PD1820AR/ZLX is an NPN Bipolar Junction Transistor manufactured by HY Pang Electronics Co. Ltd. It has excellent low-noise characteristics, making it suitable for use in communication, consumer electronic, and telecommunication applications. The device has a large current gain, a maximum forward current of 500 milliamps, and a typical forward current of 10 microamperes. Its working principle is based on the fact that it is composed of three layers of semiconductor materials, creating an NPN structure where a field effect is created when current is supplied to the base. This field effect allows the transistor to amplify current and voltage.
The specific data is subject to PDF, and the above content is for reference
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