2SK932-22-TB-E Allicdata Electronics

2SK932-22-TB-E Discrete Semiconductor Products

Allicdata Part #:

2SK932-22-TB-EOSTR-ND

Manufacturer Part#:

2SK932-22-TB-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 50MA 200MW CP
More Detail: JFET N-Channel 50mA 200mW Surface Mount 3-CP
DataSheet: 2SK932-22-TB-E datasheet2SK932-22-TB-E Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 200mV @ 100µA
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Drain to Source Voltage (Vdss): 15V
Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
Description

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Transistors are one of the most vital components in modern electronics. Of the different transistor designs available, Junction Field Effect Transistors (JFETs) are some of the most simple and versatile transistors. The 2SK932-22-TB-E JFET is one of the most popular JFETs available, thanks to its low cost, simple design and strong performance. In this article, we will look at the application field and working principle of the 2SK932-22-TB-E JFET.

The 2SK932-22-TB-E JFET is a unipolar device, meaning it only requires one DC current to operate, in contrast to bipolar transistors which need two DC currents to operate. It is an N-channel device and is made up of two parts: the gate and a channel of p-type semiconductor material. It operates in a similar way to a common FET, but with a few differences. The gate and channel are separated by an insulating layer of silicon dioxide, which prevents current flow between the two. The voltage applied to the gate creates a field which widens or narrows the channel and changes the resistance of the transistor.

The 2SK932-22-TB-E JFET has a number of uses and applications. It can be used as a voltage-controlled amplifier, as the resistance of the transistor changes with the applied voltage to the gate. In addition, it can be used as an adjustable circuit element in many analogue circuits. It is also capable of operating in high frequencies due to its low capacitance, making it a great choice for RF amplifiers and filters. Thanks to its low cost, it can also be used in many low-cost applications as well.

The most common application of the 2SK932-22-TB-E JFET is as a voltage-controlled amplifier. In this application, the gate voltage is used to control the resistance of the transistor. When the gate voltage is low, the resistance of the transistor increases. Conversely, when the gate voltage is high, the resistance of the transistor decreases. This allows the transistor to be used as an amplifier, as the current flowing through the transistor will increase or decrease depending on the gate voltage.

The 2SK932-22-TB-E JFET also has other uses, such as in analogue filters, oscillators and signal conditioning circuits. In addition, it can be used as a replacement for more expensive FETs in low-cost applications, as it offers similar performance but at a fraction of the cost. The 2SK932-22-TB-E JFET can also be used in RF applications due to its low capacitance, allowing it to operate at high frequencies.

In summary, the 2SK932-22-TB-E JFET is a simple, cost-effective and highly versatile transistor, capable of performing in a variety of applications. Its main use is as a voltage-controlled amplifier, but it is also capable of performing in many other types of circuits. Thanks to its low cost and simple design, it is an ideal choice for many different analog and RF circuits.

The specific data is subject to PDF, and the above content is for reference

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