2SK932-23-TB-E Discrete Semiconductor Products

The 2SK932-23-TB-E Field-Effect Transistor (FET) is a type of semiconductor device commonly referred to as a JFET. It is a three-terminal device which contains a source, drain and gate. It enables small amounts of current to control a much larger current in a circuit or system. This type of transistor will be ideally suited for use in small signal amplifiers and frequency converters.

Background

FETs are a type of transistor where the current does not flow directly between the source and the drain but instead is modulated by the voltage on the gate. The source, drain and gate form the three terminals of the FET, and the principle of operation is based on a so-called "space charge" due to the insulation between the source and drain. This insulation can create an "electron depletion" region, meaning that any current flow through this depletion region is proportional to the applied voltage. As a result, FETs are voltage controlled rather than current controlled devices.

2SK932-23-TB-E Application Field and Working Principle

The 2SK932-23-TB-E is a N-channel enhancement-mode JFET. This device can be used as a linear amplifier, high input impedance amplifier, signal mixer, signal clamp, signal switch, etc. The high input impedance of this device ensures that its noise is low and its gain is high, making it suitable for demanding signal conditioning applications. Also, due to the low threshold voltage associated with this device, it can be used to operate with a wide range of characteristic curves.When this device is used as an amplifier, it works as follows: the application of a small electric potential to the gate relative to the source will create an electrostatic field, which results in the creation of an electric charge in the space-glide region between the source and drain. This electric charge modulates the saturation current, resulting in a change in the drain-source current. This increase in current translates to an increase in voltage at the drain.The output voltage of the device depends on the characteristics of the JFET, as well as other factors such as temperature and the amount of current flowing through the JFET. The output voltage can be controlled by adjusting the bias current, which in turn can be adjusted by varying the voltage on the gate.

Conclusion

The 2SK932-23-TB-E Field-Effect Transistor is a type of semiconductor device commonly referred to as a JFET. It is typically used for signal conditioning applications due to its high input impedance and low noise characteristics. The device works by modulating the saturation current between the source and drain, which in turn results in an increase in the drain-source current and an increase in voltage at the drain. The output voltage of the device can be controlled by adjusting the bias current and the voltage on the gate.

2SK932-22-TB-E	ON Semicondu...	--	3000	JFET N-CH 50MA 200MW CPJF...
2SK932-23-TB-E	ON Semicondu...	--	3000	JFET N-CH 50MA 200MW CPJF...
2SK932-24-TB-E	ON Semicondu...	--	1000	JFET N-CH 50MA 200MW CPJF...