Allicdata Part #: | 497-5212-2-ND |
Manufacturer Part#: |
2STN1360 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 60V 3A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 130MHz 1.6W Su... |
DataSheet: | 2STN1360 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 150mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 1A, 2V |
Power - Max: | 1.6W |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | 2STN1360 |
Description
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2STN1360 Transistor is a type of NPN Bipolar junction transistor (BJT) that is used in a variety of applications. It is a single-stage device with a maximum collector-emitter voltage (Vce) of 150 volts and a maximum collector current (Ic) of 25 amps. This transistor is typically used in low-frequency (LF) and medium-frequency (MF) applications, such as audio amplifiers, motor drivers, and switching circuits. The 2STN1360 transistor has a high power dissipation and low noise characteristics, making it well-suited for audio applications.
The 2STN1360 transistor operates using the basic structure of an NPN bipolar junction transistor, which uses two P-type semiconductor layers separated by an N-type layer. The base of the transistor serves as the control terminal, and when it is turned on, it allows current to flow between the collector and emitter terminals. The amount of current flow between the collector and emitter is dependent on the amount of current flowing through the base. This current flow is known as the forward current gain, or hFE, and it determines the gain of the transistor.
The 2STN1360 transistor has a maximum collector-emitter voltage of 150V and a typical hFE value of 30, allowing it to be used in a variety of circuits. The collector-emitter saturation voltage is also relatively low, allowing for low power dissipation levels. The breakdown voltage of this device is typically quite high, meaning that it can handle high currents without becoming damaged. Additionally, the reverse current gain is low, which improves noise immunity. Finally, the device can handle high junction temperatures, making it suitable for use in automotive and industrial applications.
The 2STN1360 transistor can be used in applications such as audio amplifiers, motor drivers, and switching circuits. In audio applications, this device is often used in Class-B audio amplifiers to provide high power output with minimal distortion. It is also used in motor drivers to regulate the current flow to motors, ensuring they function properly. This device can also be used in switching circuits, allowing for the control of several electrical loads with a single control signal.
Overall, the 2STN1360 transistor is a versatile single NPN bipolar junction transistor designed for medium-frequency and low-frequency applications. It has a high power dissipation and low noise characteristics, allowing it to be used in audio applications without introducing unwanted noise. Additionally, the collector-emitter saturation voltage is low, meaning the device can handle high currents without becoming damaged. The 2STN1360 transistor is therefore an ideal choice for applications such as audio amplifiers, motor drivers and switching circuits.
The specific data is subject to PDF, and the above content is for reference
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