Allicdata Part #: | 30EPH03-ND |
Manufacturer Part#: |
30EPH03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 300V 30A TO247AC |
More Detail: | Diode Standard 300V 30A Through Hole TO-247AC Modi... |
DataSheet: | 30EPH03 Datasheet/PDF |
Quantity: | 1000 |
Series: | FRED Pt® |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 30A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 55ns |
Current - Reverse Leakage @ Vr: | 60µA @ 300V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -65°C ~ 175°C |
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30EPH03 Application Field and Working Principle
The 30EPH03 diode is a high performance rectifier diode with a wide range of application fields. This device has two functions: rectifying and isolating circuits. It serves as an active element in several different circuits and applications. An important distinction is the fact that a rectifier diode does not amplify electrical signals nor does it supply an energy source, but rather convert AC current into DC current.
To understand how a rectifier diode works, it’s important to first understand the concept of rectification. Rectification is the process of converting AC current into DC current by using a specialized electronic device as a bridge or filter. It’s essential to mention that rectifier diodes do not use any transistors.
The most common type of rectifying diode is the PN junction diode. This type of diode consists of two components: a P terminal and an N terminal. When a current is applied to the P and N terminals, the P layer consists of excess positive charge and the N layer consists of an excess of negative charge. This creates an electric field on the region between the P and N terminals. The electric field helps to block the applied current until the voltage drops. Once this voltage drops, current is allowed to flow through, thus forming the rectified current.
The 30EPH03 diode is a high performance rectifier diode that is designed to have a low forward voltage drop when providing power to integrated circuits, usually within 0.45V and 0.65V. It is designed to cover a wide range of currents ranging from 0.15A up to 1.0A and is rated to a maximum repetitive reverse voltage up to 43V. The current across the terminals typically follows a sinusoidal shape allowing it to deliver power in the most efficient way, meaning that the diode does not draw more power than what is needed.
The purpose of a rectifier diode is to block the flow of energy in one direction whilst allowing it to pass freely in the other. In summary, the 30EPH03 is a rectifying diode that is perfect for applications that require efficient and reliable control over AC currents such as power supply converters, motor control, and other switch-mode power supply applications.
For more information please visit: diodes.com.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VS-30EPF12PBF | Vishay Semic... | 3.88 $ | 437 | DIODE GEN PURP 1.2KV 30A ... |
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VS-30EPH03PBF | Vishay Semic... | -- | 563 | DIODE GEN PURP 300V 30A T... |
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VS-30EPU12L-N3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.2KV 30A ... |
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VS-30EPF04PBF | Vishay Semic... | 2.21 $ | 1000 | DIODE GEN PURP 400V 30A T... |
VS-30EPF10PBF | Vishay Semic... | 2.72 $ | 1000 | DIODE GEN PURP 1KV 30A TO... |
VS-30EPH03-N3 | Vishay Semic... | 3.07 $ | 1000 | DIODE GEN PURP 300V 30A T... |
VS-30EPH06HN3 | Vishay Semic... | 2.89 $ | 1000 | DIODE GEN PURP 600V 30A T... |
VS-30EPF06-M3 | Vishay Semic... | 4.1 $ | 1000 | DIODE GEN PURP 600V 30A T... |
VS-30EPF02-M3 | Vishay Semic... | 3.62 $ | 1000 | DIODE GEN PURP 200V 30A T... |
VS-30EPF04-M3 | Vishay Semic... | 3.62 $ | 1000 | DIODE GEN PURP 400V 30A T... |
VS-30EPF10-M3 | Vishay Semic... | 4.14 $ | 1000 | DIODE GEN PURP 1KV 30A TO... |
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SIT9005ACU1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACE2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACE2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACR1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACR1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACR1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACR2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACR2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACR2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACU1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACU1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACA1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACA1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACA1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACA2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACA2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACA2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACE1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACE1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
SIT9005ACE1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
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