| Allicdata Part #: | 30EPH06-ND |
| Manufacturer Part#: |
30EPH06 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 600V 30A TO247AC |
| More Detail: | Diode Standard 600V 30A Through Hole TO-247AC Modi... |
| DataSheet: | 30EPH06 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | FRED Pt® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 30A |
| Voltage - Forward (Vf) (Max) @ If: | 2.6V @ 30A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 35ns |
| Current - Reverse Leakage @ Vr: | 50µA @ 600V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-2 |
| Supplier Device Package: | TO-247AC Modified |
| Operating Temperature - Junction: | -65°C ~ 175°C |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The 30EPH06 is one of the most popular diodes on the market. It is a single junction diode with a fast recovery time and low forward voltage drop. It is ideal for use in high speed switching operations, such as those found in digital and mixed signal circuits, as well as low frequency switching applications.Mounting Configuration
The 30EPH06 is designed for mounting on printed circuit boards, with leads and through-hole technology. It is available in different lead configurations, including the standard tinned copper lead frame. The pin terminals are recessed for increased heat dissipation and an even greater thermal efficiency.Characteristics of the 30EPH06
The 30EPH06 is a single junction diode with an operating temperature range of -55° C to 125° C, a forward voltage drop of 0.443 volts, and a reverse voltage of 20 volts. It is capable of carrying a forward current of 3 amps and a surge current of 10 amps. Additionally, it possesses a fast-recovery time of 25ns, making it well-suited for high speed switching operations.Other Characteristics
Other characteristics of the 30EPH06 include a junction temperature of 175° C, an operating junction temperature range of -55° C to 150° C, and a storage temperature range of -55° C to 150° C. It also has an insulation resistance of 1000 Megohms and a breakdown voltage of approximately 5 volts. Further, it exhibits low leakage current of 0.5µA (at 1 mA forward current) and negligible junction capacitance (50pF typical).Applications
Due to its fast-recovery time and low forward voltage drop, the 30EPH06 is suitable for a variety of switching applications, including digital and mixed signals circuits, low frequency switching circuits, and high frequency switching operations. It is suitable for use in a wide range of applications, including automotive, telecommunication systems, and consumer electronics.Working Principle
The 30EPH06 is a diode, which means it operates according to the principle of rectification. It allows the current to flow in one direction only and prevents it from flowing in the other direction. The diode is composed of two regions: the anode, which is negatively charged, and the cathode, which is positively charged. The anode is connected to the positive terminal of the power source, and the cathode is connected to the negative terminal. When the voltage is higher on the anode than on the cathode, the electrons flow from the cathode to the anode, creating a current. When the voltage is higher on the cathode than on the anode, the current is blocked. This is known as the rectifying effect of the diode.Conclusion
The 30EPH06 is a single junction diode that is popular on the market. It has a low forward voltage drop, a fast-recovery time, and is suitable for a variety of switching applications. It is used in a wide range of applications, including automotive, telecommunication systems, and consumer electronics. The diode works according to the principle of rectification, allowing the current to flow in one direction only and preventing it from flowing in the other.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "30EP" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SIT9005ACA1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPH03-N3 | Vishay Semic... | 3.07 $ | 1000 | DIODE GEN PURP 300V 30A T... |
| VS-30EPF06-M3 | Vishay Semic... | 4.1 $ | 1000 | DIODE GEN PURP 600V 30A T... |
| SIT9005ACE1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACU1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACE2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACA2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| 30EPF10 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 30A TO... |
| SIT9005ACB1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACT1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACR1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACL1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF02-M3 | Vishay Semic... | 3.62 $ | 1000 | DIODE GEN PURP 200V 30A T... |
| SIT9005ACU2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACE1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF06PBF | Vishay Semic... | 3.19 $ | 3090 | DIODE GEN PURP 600V 30A T... |
| SIT9005ACA2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACB2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF10PBF | Vishay Semic... | 2.72 $ | 1000 | DIODE GEN PURP 1KV 30A TO... |
| SIT9005ACU2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPU12L-N3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.2KV 30A ... |
| SIT9005ACT2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACE1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACA1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPU12LHN3 | Vishay Semic... | 1.28 $ | 1000 | DIODE GEN PURP 1.2KV 30A ... |
| SIT9005ACL2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACF1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| RB520S-30EP-TP | Micro Commer... | 0.03 $ | 1000 | DIODE SCHOTTKY 30V 100MA ... |
| VS-30EPF04-M3 | Vishay Semic... | 3.62 $ | 1000 | DIODE GEN PURP 400V 30A T... |
| SIT9005ACT1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACU1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACT1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPH03PBF | Vishay Semic... | -- | 563 | DIODE GEN PURP 300V 30A T... |
| 30EPF12 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.2KV 30A ... |
| 30EPF02 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 30A T... |
| 30EPH03 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 300V 30A T... |
| SIT9005ACU2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACB2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACA2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACT2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
Latest Products
IDW30E65D1
Diodes - General Purpose, Power, Switchi...
PMEG4005AEA/M5X
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
RGP10J-057M3/54
DIODE GEN PURPOSE DO-204ALDiode
1N4004-N-2-2-BP
DIODE GEN PURP 400V 1A DO41Diode Standar...
CPD76X-1N5817-CT
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
JANTXV1N6662US
DIODE GEN PURP 400V 500MA D5ADiode Stand...
30EPH06 Datasheet/PDF