375-102N12A-00 Allicdata Electronics
Allicdata Part #:

375-102N12A-00-ND

Manufacturer Part#:

375-102N12A-00

Price: $ 16.54
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS-RF
Short Description: RF MOSFET N-CHANNEL DE375
More Detail: RF Mosfet N-Channel 940W DE375
DataSheet: 375-102N12A-00 datasheet375-102N12A-00 Datasheet/PDF
Quantity: 126
1 +: $ 15.03810
10 +: $ 13.91230
100 +: $ 11.88220
Stock 126Can Ship Immediately
$ 16.54
Specifications
Series: DE
Packaging: Tube 
Part Status: Active
Transistor Type: N-Channel
Frequency: --
Gain: --
Current Rating: 12A
Noise Figure: --
Power - Output: 940W
Voltage - Rated: 1000V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE375
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 375-102N12A-00 is a silicon N-Channel enhancement mode metal-oxide-semiconductor field effect transistor (MOSFET). It is commonly used in power electronic application due to its excellent high-frequency characteristics, as well as its low on-state resistance and superior heat dissipation ability. The 375-102N12A-00 is used in a variety of applications, including radio-frequency (RF) amplifiers, power management, power conditioning, voltage switching, and current switching.

The 375-102N12A-00 is a three-terminal device, with an anode, a cathode and a gate. The anode is the most positive terminal and the cathode is the most negative terminal. The gate is the control terminal of the device and is used to switch on and off the flow of current between the anode and the cathode. It is important to note that the 375-102N12A-00 only works when a positive voltage is applied to the gate. If a negative voltage is applied, the device will turn off and no current will flow.

When the 375-102N12A-00 is turned on and current flows between the anode and the cathode, it operates as an amplifier and the output voltage is proportional to the input voltage applied to the gate. This property makes the 375-102N12A-00 an ideal choice for RF amplifiers and other power electronic applications. The 375-102N12A-00 also has excellent temperature stability and immunity to thermal runaway, which makes it highly reliable for repetitive and continuous applications.

The 375-102N12A-00 also has very low gate leakage current, which can extend the device’s life in high power applications. In addition, the low threshold voltage, which is the voltage required to switch on the device, makes the 375-102N12A-00 a good choice for low-voltage applications. The 375-102N12A-00 also has a low-noise characteristic, which makes it suitable for applications that require high precision.

In summary, the 375-102N12A-00 is an excellent choice for a variety of power electronic applications. It has excellent high-frequency characteristics and superior thermal performance, and its low-noise characteristic makes it a great choice for applications that require high precision. Additionally, its low gate leakage current makes the 375-102N12A-00 highly reliable for repetitive and continuous applications.

The specific data is subject to PDF, and the above content is for reference

Latest Products
MRF6S21050LR3

FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...

MRF6S21050LR3 Allicdata Electronics
MRF6S18060NR1

FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...

MRF6S18060NR1 Allicdata Electronics
MRF1550NT1

FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...

MRF1550NT1 Allicdata Electronics
MRF8S21100HSR3

FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...

MRF8S21100HSR3 Allicdata Electronics
LET16060C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16060C Allicdata Electronics
LET16045C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16045C Allicdata Electronics