Allicdata Part #: | 375-102N15A-00-ND |
Manufacturer Part#: |
375-102N15A-00 |
Price: | $ 17.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS-RF |
Short Description: | RF MOSFET N-CHANNEL DE375 |
More Detail: | RF Mosfet N-Channel 940W DE375 |
DataSheet: | 375-102N15A-00 Datasheet/PDF |
Quantity: | 73 |
1 +: | $ 16.31700 |
10 +: | $ 15.09230 |
100 +: | $ 12.88950 |
Series: | DE |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | -- |
Gain: | -- |
Current Rating: | 15A |
Noise Figure: | -- |
Power - Output: | 940W |
Voltage - Rated: | 1000V |
Package / Case: | 6-SMD, Flat Lead Exposed Pad |
Supplier Device Package: | DE375 |
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The 375-102N15A-00 is a type of transistor, specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is an active electronic device based on a semiconductor that is used for switching and amplification. This particular MOSFET, which is made by STMicroelectronics, is a RF MOSFET. It is specifically designed for radio frequency (RF) applications, where it is used in just about any circuit that needs RF amplification and power control.
In general, transistors are electronic components that have three terminals, also referred to as electrodes. A power supply is connected to two of the terminals, while the third terminal is activated by the current flow in the transistor. When a small current flows between the power-supply terminals, a larger current flows between the controlling voltage and the third terminal (the gate). This regulation of current is what makes the transistor ideal for switching and amplification.
MOSFETs are especially useful transistors because of their low voltage and high current handling capabilities, making them ideal for low-power circuits such as radio-frequency circuits. MOSFETs consist of five regions: source, drain, body, gate, and substrate. The source and drain are two asymmetric regions that contain the majority of the current flow. The body, or the base, is the substrate over which the source and the drain layers are created. Lastly, the gate is the region through which the current is regulated when a gate voltage is applied. In a MOSFET, a high gate voltage will cause the current to flow between the drain and the source, while a low gate voltage will effectively shut off the current flow.
The 375-102N15A-00 RF MOSFET is designed specifically to operate over the 27MHz to 500MHz frequency range, making it ideal for use in applications such as radars, satellite communications, and wireless systems. It has an operating voltage of 20V and is capable of handling up to 7.2A of current. In addition, it has a power gain of 15dB and a maximum noise figure of 17dB.
RF MOSFETs are used in a wide variety of applications, from small-scale electronics projects to large-scale communication networks. They are used to amplify small signals and to control large amounts of power, making them essential components in wireless communications and radio-frequency control. The 375-102N15A-00 is an excellent choice for any application requiring a reliable, low-power, high-frequency MOSFET.
The specific data is subject to PDF, and the above content is for reference
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