375-102N15A-00 Allicdata Electronics
Allicdata Part #:

375-102N15A-00-ND

Manufacturer Part#:

375-102N15A-00

Price: $ 17.95
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS-RF
Short Description: RF MOSFET N-CHANNEL DE375
More Detail: RF Mosfet N-Channel 940W DE375
DataSheet: 375-102N15A-00 datasheet375-102N15A-00 Datasheet/PDF
Quantity: 73
1 +: $ 16.31700
10 +: $ 15.09230
100 +: $ 12.88950
Stock 73Can Ship Immediately
$ 17.95
Specifications
Series: DE
Packaging: Tube 
Part Status: Active
Transistor Type: N-Channel
Frequency: --
Gain: --
Current Rating: 15A
Noise Figure: --
Power - Output: 940W
Voltage - Rated: 1000V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE375
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 375-102N15A-00 is a type of transistor, specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is an active electronic device based on a semiconductor that is used for switching and amplification. This particular MOSFET, which is made by STMicroelectronics, is a RF MOSFET. It is specifically designed for radio frequency (RF) applications, where it is used in just about any circuit that needs RF amplification and power control.

In general, transistors are electronic components that have three terminals, also referred to as electrodes. A power supply is connected to two of the terminals, while the third terminal is activated by the current flow in the transistor. When a small current flows between the power-supply terminals, a larger current flows between the controlling voltage and the third terminal (the gate). This regulation of current is what makes the transistor ideal for switching and amplification.

MOSFETs are especially useful transistors because of their low voltage and high current handling capabilities, making them ideal for low-power circuits such as radio-frequency circuits. MOSFETs consist of five regions: source, drain, body, gate, and substrate. The source and drain are two asymmetric regions that contain the majority of the current flow. The body, or the base, is the substrate over which the source and the drain layers are created. Lastly, the gate is the region through which the current is regulated when a gate voltage is applied. In a MOSFET, a high gate voltage will cause the current to flow between the drain and the source, while a low gate voltage will effectively shut off the current flow.

The 375-102N15A-00 RF MOSFET is designed specifically to operate over the 27MHz to 500MHz frequency range, making it ideal for use in applications such as radars, satellite communications, and wireless systems. It has an operating voltage of 20V and is capable of handling up to 7.2A of current. In addition, it has a power gain of 15dB and a maximum noise figure of 17dB.

RF MOSFETs are used in a wide variety of applications, from small-scale electronics projects to large-scale communication networks. They are used to amplify small signals and to control large amounts of power, making them essential components in wireless communications and radio-frequency control. The 375-102N15A-00 is an excellent choice for any application requiring a reliable, low-power, high-frequency MOSFET.

The specific data is subject to PDF, and the above content is for reference

Latest Products
MRF6S21050LR3

FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...

MRF6S21050LR3 Allicdata Electronics
MRF6S18060NR1

FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...

MRF6S18060NR1 Allicdata Electronics
MRF1550NT1

FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...

MRF1550NT1 Allicdata Electronics
MRF8S21100HSR3

FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...

MRF8S21100HSR3 Allicdata Electronics
LET16060C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16060C Allicdata Electronics
LET16045C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16045C Allicdata Electronics