3B1.6UM

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Part Status:	Active

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• Introduction

3B1.6UM is an ultra-high mobility field effect transistor that offers superior performance for RF and mm-wave applications. It is a modern, power-miserly field effect transistor (FET) that offers low Vds and Ids for both enhancement- and depletion-mode operation. With an improved high electron mobility, this transistor offers higher switching speed, lower gate capacitance, and higher switching power. Moreover, it has superior stability, aiding in the design of high frequency, high dynamic range applications.

• Application Field

3B1.6UM has numerous applications in the RF and mm-wave range, including amplifiers, switches, and attenuators. It is ideal for both linear and switching high-frequency operation. It has a wide linear high-frequency capability, hence, most applicable in amplifiers and wideband control due to its high frequency and transition gain. Due to the reduced gate capacitance that allows the 3B1.6UM transistor to have lower power dissipation, it is used extensively in linear applications such as high dynamic range amplifiers, linear radio frequency and microwave amplifiers, gain stabilized transmitters, and low transit time amplifiers.The 3B1.6UM also offers very low power dissipation which makes it extremely suitable for mm-wave operation. The low power dissipation makes it suitable in applications that require low frequency noise and flicker. With its high current gain, this FET is commonly used in amplifier stages, making it a great choice for high speed, high frequency applications.

• Working Principle

The 3B1.6UM is a field-effect transistor which operates according to the principle of the generation of an induced channel current by a voltage applied to the gate of the device. Constant current is sourced through the channel from the drain to the source, and the gate voltage regulates the channel current. The 3B1.6UM transistor is a two gate octal structure containing two different aluminum and silicon gates with different channel profiles. This structure not only allows for high mobility in the channel but also lower power dissipation.The 3B1.6UM also offers superior stability due to its narrow channel width and improved channel profile. The channel width and device layout allow for improved electron mobility which further helps with reducing capacitance between the device and gate, and ensures higher switching power and considerable improvement in performance. The 3B1.6UM has a high current density and low output capacitance, which enables a high switching speed and low power consumption. This design also ensures that it can be operated in both enhancement and depletion mode. Due to its superior design and characteristics, it is highly suitable for use in RF and mm-wave applications.

• Conclusion

3B1.6UM is an ultra-high mobility field effect transistor that offers superior performance for RF and mm-wave applications. It offers low Vds and Ids for both enhancement- and depletion-mode operation, with its high electron mobility, allowing for higher switching speed, lower gate capacitance, and higher switching power and superior stability.It has numerous applications, most commonly in amplifiers, switches, and attenuators for its wide linear high-frequency capability, as well as its enhanced design providing substantial improvement in performance. Due to its high current density, low output capacitance, and improved channel profile, the 3B1.6UM can be operated in both enhancement and depletion mode, making it highly suitable for use in RF and mm-wave applications.

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