3EZ10D10E3/TR8 Allicdata Electronics
Allicdata Part #:

3EZ10D10E3/TR8-ND

Manufacturer Part#:

3EZ10D10E3/TR8

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 10V 3W DO204AL
More Detail: Zener Diode 10V 3W ±10% Through Hole DO-204AL (DO-...
DataSheet: 3EZ10D10E3/TR8 datasheet3EZ10D10E3/TR8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.48620
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±10%
Power - Max: 3W
Impedance (Max) (Zzt): 3.5 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 7.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ10
Description

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The 3EZ10D10E3/TR8 is a single Zener diode. Zener diodes are specially designed to conduct current in only one direction, and they are also reverse-biased. When the voltage across the diode reaches a certain level, the diode breaks down and allows current to flow freely in both directions, a phenomenon known as Zener breakdown.

The 3EZ10D10E3/TR8 is used in a wide range of applications, such as voltage regulation, signal rectification, overvoltage protection and surge protection. It is designed to be used in low voltage and power supply circuits, providing a controlled and constant current flow despite any fluctuations in input voltage.

The 3EZ10D10E3/TR8 is specifically designed to handle a maximum of 10 volts at 10 amps, with a breakdown voltage of 5.4 volts. It is a surface-mounted device and has a fast reverse recovery time. It is also relatively robust, withstanding both shock and vibration.

The working principle of the 3EZ10D10E3/TR8 relies on the process of Zener breakdown. When the reverse-biased diode is exposed to sufficient reverse voltage, it will cause the depletion layer to break down, and the electric field in the depletion layer will substantially increase. When the electric field magnitude exceeds the breakdown voltage, the diode will become a low resistance path between its anode and cathode, allowing current to flow freely in both directions. This effectively allows the diode to regulate the voltage level in a circuit and provide protection against overvoltage.

In short, the 3EZ10D10E3/TR8 is a single Zener diode that is designed to handle a maximum of 10 volts at 10 amps and a breakdown voltage of 5.4 volts. It is used in a variety of applications such as voltage regulation, signal rectification and overvoltage protection, and it operates by relying on the process of Zener breakdown. The diode is also robust and can withstand shock and vibration.

The specific data is subject to PDF, and the above content is for reference

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