3EZ17D10/TR8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	17V
Tolerance:	±10%
Power - Max:	3W
Impedance (Max) (Zzt):	6 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 13V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	3EZ17

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.Introduction
The 3EZ17D10/TR8 is a single Zener diode device developed by LiteOn Semiconductor Corporation. It is a high power Zener diode that is designed to be used in applications that require very low breakdown voltage and very high current. It is a very efficient device that can handle very large current levels without introducing too much noise or power loss.Applications
The 3EZ17D10/TR8 is widely used in various applications such as switching power supplies, motor controllers, DC/DC converters, overvoltage protection circuits, and in general signal processing. It is primarily used in switching power supplies due to its high current carrying capacity and its ability to quickly switch signals. It is also used in motor controllers to protect components against voltage and current surge and to provide signal switching. In DC/DC converters, the device is used to convert and regulate between higher and lower voltages. It is used in overvoltage protection circuits for preventing components from being damaged due to overvoltage and overcurrent. Finally, the 3EZ17D10/TR8 is used in signal processing applications to switch and control signal levels with low speed and low noise.Working Principle
The 3EZ17D10/TR8 is a single Zener diode device, which has very low breakdown voltage and very high current carrying capacity. The device works on the principle of Zener breakdown. Zener breakdown occurs when the voltage across the junction of the silicon and the vacuum creates a large electric field. This electric field causes electrons to be forced into the conduction band, thus creating a current. The current thus created flows through the diode and is dependent on the voltage across the diode junction. As the voltage increases, the electric field becomes stronger and the current increases. The breakdown voltage of the 3EZ17D10/TR8 is 18 volts, and it has a very high current capacity.Advantages
There are several advantages to using the 3EZ17D10/TR8 device in various applications. The first and foremost advantage is its low breakdown voltage and high current carrying capacity. This makes it suitable for switching power supplies, motor controllers, DC/DC converters and other high current applications. Its low voltage and quick response time make it ideal for signal processing applications. It is also known for its high efficiency, which requires less power consumption than other devices. Additionally, the device is resistant to vibration, shock, and temperature changes, making it suitable for use in harsh environments.Conclusion
The 3EZ17D10/TR8 is a single Zener diode device developed by LiteOn Semiconductor Corporation. It is a highly efficient device that is suitable for various applications such as switching power supplies, motor controllers, DC/DC converters, overvoltage protection circuits, and signal processing applications. The device works on the principles of Zener breakdown and is characterized by very low breakdown voltage and high current capacity. It also has several advantages such as low power consumption, quick response time, resistance to vibration, shock and temperature changes.

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