3EZ180D5E3/TR8 Allicdata Electronics
Allicdata Part #:

3EZ180D5E3/TR8-ND

Manufacturer Part#:

3EZ180D5E3/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 180V 3W DO204AL
More Detail: Zener Diode 180V 3W ±5% Through Hole DO-204AL (DO-...
DataSheet: 3EZ180D5E3/TR8 datasheet3EZ180D5E3/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 180V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 700 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 136.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Description

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Diodes - Zener - Single - 3EZ180D5E3/TR8 Application Field and Working Principle

The 3EZ180D5E3/TR8 is a single Zener diode that can be used in a variety of applications such as over-voltage protection, voltage regulation, voltage clamping, switching, and rectification. This diode features an operating voltage range of 5.0V to 180V and a maximum power dissipation of 500mW. The 3EZ180D5E3/TR8 is a PN junction diode with a built-in controlled breakdown voltage. This breakdown voltage is usually chosen to be the Zener voltage, which is the voltage level at which the diode will start conducting. The Zener voltage of this diode is the same as its peak reverse voltage (VR) of 180V.The working principle of the 3EZ180D5E3/TR8 is based on the behavior of the junction diode. When the diode is in forward bias, the majority carriers from the N-type semiconductor cross the PN junction and enter the P-type semiconductor, creating a current that flows in the forward direction. When the diode is in reverse bias, minority carriers from the P-type semiconductor cross the PN junction and enter the N-type semiconductor, creating a reverse current. When the reverse voltage applied to the diode reaches its peak reverse voltage (VR), the number of minority carriers reaching the N-type semiconductor also increases dramatically. This increase in minority carriers causes a current surge that is known as Zener Breakdown. After this breakdown voltage is reached, the resistance of the diode becomes very small, allowing most of the current to pass through the device. The 3EZ180D5E3/TR8 is commonly used in applications that need to control the voltage level in a circuit. For example, the diode can be used to regulate the voltage so that a sensitive component is not damaged by a sudden increase or decrease in the supply voltage. It can also be used as a voltage clamp to limit the voltage level in a circuit, preventing it from exceeding a certain predetermined level. The diode can be used as a switch to provide a low-resistance path for current when the voltage reaches a certain level, and it can also be used for rectification purposes. In summary, the 3EZ180D5E3/TR8 is a single Zener diode that can be used in a variety of applications such as over-voltage protection, voltage regulation, voltage clamping, switching, and rectification. The diode features an operating voltage range of 5V to 180V, and a maximum power dissipation of 500mW. The diode can be used to regulate the voltage in a circuit and to limit the voltage level in a circuit. It can also be used as a switch and for rectification purposes.

The specific data is subject to PDF, and the above content is for reference

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