3EZ110D/TR8 Allicdata Electronics
Allicdata Part #:

3EZ110D/TR8-ND

Manufacturer Part#:

3EZ110D/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 110V 3W DO204AL
More Detail: Zener Diode 110V 3W ±20% Through Hole DO-204AL (DO...
DataSheet: 3EZ110D/TR8 datasheet3EZ110D/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±20%
Power - Max: 3W
Impedance (Max) (Zzt): 225 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ110
Description

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The 3EZ110D/TR8 is a Zener diode that is used in a variety of applications, ranging from voltage regulation to the protection of circuit components. It is an unidirectional semiconductor device, capable of withstanding reverse voltage up to its rated peak reverse voltage. The Zener diode is also known for its ability to maintain its voltage level for long periods of time and for its high current capacity. The 3EZ110D/TR8 is an ideal choice for use in switching power supplies, electronic instrumentation, consumer electronics, and related applications that require high current capacity, voltage regulation, and reliable protection.

The 3EZ110D/TR8 is a single Zener diode that is used in power supplies and other applications that require high-current protection from voltages up to and exceeding its rated peak reverse voltage (VZ). It is a robust design that is built to withstand the rigors of harsh environments, both physically and electrically. It is constructed with a wide range of materials, including silicon and metal, to ensure that it is capable of withstanding extreme temperatures, humidity, and voltage transients. Furthermore, its integrated structure allows for easy installation and maintenance.

The 3EZ110D/TR8 works by regulating the voltage level at its output terminal, keeping it within a predetermined voltage range regardless of the input voltage. This is achieved through the application of a Zener breakdown effect. When the voltage at the anode of the diode exceeds the Zener voltage (VZ), it will break down and allow the excess voltage to be conducted to the cathode. As the current increases, the voltage will remain constant at the Zener voltage as long as the maximum current rating is not exceeded.

The 3EZ110D/TR8 also has a wide range of operating frequencies, making it suitable for a variety of high-frequency applications. This is achieved by its design, incorporating an internal capacitance that acts as a high-frequency filter. This helps to reduce the amount of noise generated due to the switching of the power supply and make it suitable for use in high-frequency applications.

In addition to its numerous applications, the 3EZ110D/TR8 offers a number of features that help to ensure its reliability and performance. Its four-terminal design ensures high-contact stability, reducing the chance of device failure due to mechanical shocks. Furthermore, its high surge-withstand capability helps to protect the device from overvoltage transients, ensuring that the device remains operational in the presence of high levels of voltage transients. Furthermore, its large current-handling capacity and low-power consumption make it suitable for use in power supplies and related applications.

The 3EZ110D/TR8 is an ideal choice for applications that require reliable voltage regulation, high-current protection, and reliable protection from voltage transients. Its robust design and numerous features make it suitable for a variety of electronic applications, and its wide operating frequencies make it suitable for use in high-frequency applications. For these reasons and more, the 3EZ110D/TR8 is a reliable and cost-effective choice for any application that requires a high-performance Zener diode.

The specific data is subject to PDF, and the above content is for reference

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