3EZ120D/TR12 Allicdata Electronics
Allicdata Part #:

3EZ120D/TR12-ND

Manufacturer Part#:

3EZ120D/TR12

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 120V 3W DO204AL
More Detail: Zener Diode 120V 3W ±20% Through Hole DO-204AL (DO...
DataSheet: 3EZ120D/TR12 datasheet3EZ120D/TR12 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 120V
Tolerance: ±20%
Power - Max: 3W
Impedance (Max) (Zzt): 300 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 91.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ120
Description

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The 3EZ120D/TR12 is a single Zener diode with a cathode band denoting its type. It is designed and manufactured to provide a stable operating temperature and to ensure optimal efficiency in a wide variety of applications, including those requiring high-power and/or ultra-high voltage and/or high-frequency regulation. The 3EZ120D/TR12 is especially ideal for use in protection circuits, and in systems requiring a reliable and stable reference point.

A Zener diode is a type of diode that takes advantage of what is known as the Zener breakdown effect. Its use allows designers to create voltage sources and voltage references that provide a stable output voltage over a wide range of input voltage values. The 3EZ120D/TR12 is a single Zener diode that can be used in a wide variety of applications. It has a rated breakdown voltage of 120 volts and is designed to have a maximum reverse current of 3 microamperes, with a maximum reverse power dissipation of 0.5 watts. T The diode also has an ideal reverse recovery time of 20 nanoseconds, while operating temperature range is from -25 to 110 degrees Celsius.

The 3EZ120D/TR12 is also characterized by its stable output voltage and precise current regulation at high frequencies. Additionally, the device features a junction-to-case thermal resistance of 1.3 °C/W, exchangeable for a larger 1.6 °C/W to achieve better thermal performance. This further makes it ideal for use in a wide range of industries, including sensing and control, aerospace, communications, power and industrial applications.

To understand how the 3EZ120D/TR12 works it is important to understand the Zener diode and the Zener effect. Inside the diode is a p-n junction, which consists of a P region of n-type material and an n region of p-type material all within a single semiconductor crystal. As current is applied, the electrons become free and move toward the P region creating a depletion layer across the p-n junction. As the voltage is increased, the electrons will eventually reach the P region and the barrier potential will be exceeded, initiating a reverse current known as the Zener breakdown. This results in the diode becoming a voltage regulator, with the breakdown voltage acting as its constant reference.

The 3EZ120D/TR12 is a single Zener diode that offers a range of features, making it ideal for use in a variety of applications. Its rated breakdown voltage of 120 volts, along with its maximum reverse current of 3 microampere, maximum reverse power dissipation of 0.5 watts, and fast reverse recovery time of 20 nanoseconds make it particularly suitable for protection circuits and for use in systems requiring a reliable and stable reference point. Moreover, its junction-to-case thermal resistance of 1.3 °C/W, and optional 1.6 °C/W are compatible with industrial applications. Thus, the 3EZ120D/TR12 is an excellent choice for a variety of applications demanding a reliable, high-precision, and high-current output with superior protection.

The specific data is subject to PDF, and the above content is for reference

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