3EZ12D10E3/TR12 Allicdata Electronics
Allicdata Part #:

3EZ12D10E3/TR12-ND

Manufacturer Part#:

3EZ12D10E3/TR12

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 12V 3W DO204AL
More Detail: Zener Diode 12V 3W ±10% Through Hole DO-204AL (DO-...
DataSheet: 3EZ12D10E3/TR12 datasheet3EZ12D10E3/TR12 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.45379
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±10%
Power - Max: 3W
Impedance (Max) (Zzt): 4.5 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ12
Description

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The 3EZ12D10E3/TR12 is a type of single Zener diode that is widely used in a range of different application fields. It is designed to provide a reliable and efficient means of protection from voltage spikes and overvoltages, as well as to provide the desired levels of reverse voltage. The 3EZ12D10E3/TR12 diode consists of an N-channel semiconductor material, usually silicon, which is doped with impurities of boron, phosphorus or arsenic. This N-channel material is then connected to a P-channel material, usually gallium arsenide, through two heavily doped regions.

The 3EZ12D10E3/TR12 works on the principle of the Avalanche effect. In this process, electrons crossing the N-channel material gain energy from the higher doping levels. This energy is then transferred to the P-channel material, creating a large current pulse. This pulse then breaks down the P-channel material, creating a "Zener" breakdown in the reverse direction. The peak value of the breakdown voltage is dependent on the doping levels of the N and P-channel materials, and is determined by the diode\'s specifications.

The 3EZ12D10E3/TR12 diode is used in a variety of applications. It is a popular choice for protecting voltage sensitive components from overvoltage or voltage spikes. It is also used in rectifier circuits, over-current protection, DC-DC converters, and flyback transformers. The high current-handling capabilities of the 3EZ12D10E3/TR12, combined with its low voltage drop, make it an ideal choice for high power applications. It is also used in automotive electronics, telecoms and computer applications, thanks to its small size and efficient performance.

The 3EZ12D10E3/TR12 diode is a reliable and efficient device, providing a range of protection to circuits and components. Its ability to provide reliable reverse voltage protection, as well as to dissipate large amounts of power, makes it an ideal choice for a range of different applications. Thanks to its small size and efficient operation, it is a popular choice for both commercial and industrial application fields.

The specific data is subject to PDF, and the above content is for reference

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