3EZ12D2E3/TR8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	12V
Tolerance:	±2%
Power - Max:	3W
Impedance (Max) (Zzt):	4.5 Ohms
Current - Reverse Leakage @ Vr:	1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	3EZ12

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Diodes - Zener - Single - Application Field and Working Principle

Overview

3EZ12D2E3/TR8 is a type of single zener diode which has its application field and working principle. This type of diode can be used for regulating voltage, stabilizing current, and providing protection from voltage surge. This article will explain the application field, working principle, and features of 3EZ12D2E3/TR8 diode.

Application Field

3EZ12D2E3/TR8 diodes, also known as Zener diodes, can be used for regulating voltage for a given circuit. These diodes are commonly used in power supplies, voltage regulators, and voltage shifters. They are also used in battery-operated electronic devices, such as digital cameras, audio-visual equipment, portable computers, and many more. Another application field of 3EZ12D2E3/TR8 diodes includes stabilizing or limiting current in a given circuit. These diodes are also used in surge protection circuits, where they can protect sensitive devices from overvoltages.

Working Principle

The working principle of 3EZ12D2E3/TR8 diodes is based on Zener breakdown. Zener breakdown is a special type of electric breakdown, which occurs when the voltage across an n-type semiconductor junction is increased beyond its break-down voltage. When the diode is reverse-biased, the electric field of the applied voltage exceeds the electric field strength of the depletion region of the junction, resulting in the formation of a new channel of charge carriers, known as the Zener breakdown region. This creates an electric current which is proportional to the applied voltage. The 3EZ12D2E3/TR8 diode can be used for both Zener breakdown and avalanche breakdown. When reverse-biased, the diode can be used for Zener breakdown, in which a greatly reduced forward voltage drop is observed across the diode, allowing current to flow through it in a controlled fashion. On the other hand, when forward-biased, the diode can be used for avalanche breakdown, in which a greatly increased current is observed, due to the strong electric field created by the applied voltage.

Features

The 3EZ12D2E3/TR8 diode has a surge voltage of 2.6V. It can handle peak and reverse currents of up to 9A and 12A, respectively. It has a storage temperature range of -55°C to +150°C and an operating temperature range of -30°C to 90°C. Its maximum power dissipation is 600mW and its maximum thermal resistance is 0.5°C/W. In conclusion, 3EZ12D2E3/TR8 diodes can be used for regulating voltage, stabilizing current, and providing protection from voltage surge in a variety of applications. They are reliable and efficient diodes, with a wide range of features which make them a great choice for any circuit.

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