3EZ15D2E3/TR8 Allicdata Electronics
Allicdata Part #:

3EZ15D2E3/TR8-ND

Manufacturer Part#:

3EZ15D2E3/TR8

Price: $ 0.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 15V 3W DO204AL
More Detail: Zener Diode 15V 3W ±2% Through Hole DO-204AL (DO-4...
DataSheet: 3EZ15D2E3/TR8 datasheet3EZ15D2E3/TR8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.58510
Stock 1000Can Ship Immediately
$ 0.65
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±2%
Power - Max: 3W
Impedance (Max) (Zzt): 5.5 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 11.4V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ15
Description

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Diodes - Zener - Single refers to diodes that have a reverse breakdown voltage that is close to a specified nominal value. The 3EZ15D2E3/TR8 is a Zener diode with a maximum reverse breakdown voltage of 15V. This diode is widely used in varieties of applications due to the unique characteristics it offers.

Applications of 3EZ15D2E3/TR8

3EZ15D2E3/TR8 is mainly used in regulating the voltage and regulating electric current in various applications. It is particularly suitable for voltage-stabilization circuits, voltage-dividing circuits and protective circuits. Other applications include the following:

  • Power supply circuits: This type of diode can be used in power supply circuits for voltage regulation and voltage stabilization.
  • Power electronic devices: The diode can be used as a regulator or a bypass device for power electronic devices, such as motor drivers, electric drives, and power converters.
  • Data communication and measurement equipment: The diode can help reduce noise and protect against over-voltage in data communication and automatic measurement equipment.

Working Principle

The 3EZ15D2E3/TR8 diode is a two- terminal, passive and symmetric semiconductor device. With its built-in, symmetrically arranged p-n junction, this diode is capable of rectifying an AC signal, allowing the current to flow in only one direction. In reverse bias conditions, the electric field generated across the junction increases to a certain level and breaks down the built-in potential barrier between the n-type and p-type materials, enabling the current to flow in the opposite direction.

The breakdown voltage is the most important parameter of the Zener diode, very much like the forward blocking voltage of a PN junction diode. It is determined by the level of electric field that the diode can handle before breakdown. The threshold voltage of the Zener diode helps in controlling the feedback and stabilizing the voltage.

In order to ensure a maximum reverse breakdown voltage of 15V for the 3EZ15D2E3/TR8, its semiconductor material must be highly resistant. This is achieved through meticulous quality control of imprinting conditions, such as the alloying temperature, time and rate of cooling, as well as of the thermal annealing process.

Conclusion

The 3EZ15D2E3/TR8 is a Zener diode with a maximum reverse breakdown voltage of 15V, widely used in regulating electric current and voltage, reducing noise and protecting against over-voltage in various applications. This diode features a built-in, symmetrically arranged p-n junction, allowing current to flow in only one direction. In order to ensure the maximum reverse breakdown voltage of 15V, the diode must consist of highly resistant semiconductor material, which is achieved through meticulous quality control of the imprinting conditions and the thermal annealing process.

The specific data is subject to PDF, and the above content is for reference

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