Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	160V
Tolerance:	±2%
Power - Max:	3W
Impedance (Max) (Zzt):	625 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 121.6V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	3EZ160

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Diodes - Zener - Single: 3EZ160D2E3/TR8 Application Field and Working Principle

Introduction

A 3EZ160D2E3/TR8 is a type of zener diode that offers exceptional performance and reliability. It is used in a wide range of electrical applications, such as voltage regulation, voltage clamping, and surge protection. Zener diodes are widely employed, and play an important role in many circuits.

Application Field

The 3EZ160D2E3/TR8 is a high power, low-leakage zener diode, appropriate for precision voltage stabilization networks, voltage clamping circuits, and surge protection. Because of its high breakdown voltage, the 3EZ160D2E3/TR8 is an ideal device for controlling extremely high voltages in power electronics, such as welding and solar energy systems. It is also widely used in automotive laser and sensor applications, where it is required to provide reliable high voltage protection from extreme electrical disturbances.

Functional Principle

The 3EZ160D2E3/TR8 consists of an N-type and P-type semiconductor junction, that together form a diode can conduct current in one direction but not the other. The Zener voltage of the 3EZ160D2E3/TR8 diode is very predictable and stable, because of the highly reliable, stable junction.The current transfer in the 3EZ160D2E3/TR8 occurs in a forward bias when current flows from anode to cathode. In reverse bias, excess electrons accumulate near the N-side junction and a depletion region is formed. This results in an increased electric field and a reduced potential barrier to widen the junction. As the reverse bias voltage increases, the depletion region continues to widen, increasing the electric field and thus allowing current transfer from cathode to anode.The 3EZ160D2E3/TR8 reaches its specified reverse breakdown voltage when the electric field strength becomes sufficiently high to cause the current to flow through the leakage path. This causes the reverse current to rapidly increase and sets a limit to the reverse voltage.

Conclusion

The 3EZ160D2E3/TR8 is a high power, low-leakage zener diode that offers exceptional performance and reliability. It is widely used in power electronics, automotive laser and sensor applications, and other high voltage applications. The 3EZ160D2E3/TR8 offers excellent protection from electrical disturbances. The reliable, stable junction ensures a predictable and stable Zener voltage range.

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