3EZ170D5/TR8 Allicdata Electronics
Allicdata Part #:

3EZ170D5/TR8-ND

Manufacturer Part#:

3EZ170D5/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 170V 3W DO204AL
More Detail: Zener Diode 170V 3W ±5% Through Hole DO-204AL (DO-...
DataSheet: 3EZ170D5/TR8 datasheet3EZ170D5/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 170V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 650 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 130.4V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ170
Description

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Diodes are essential components used in modern amplifier circuits, power converters and power management systems. The 3EZ17OD5/TR8 is a single Zener diode that offers several advantages. This diode’s high-zener voltage, low leakage current and superior ESD protection make it an ideal choice for use in power management, communications and consumer electronics.

A Zener diode is a semiconductor device used mainly to regulate the voltage in devices and circuits. These diodes allow current to flow in both directions and provide a stable voltage in circuits. The 3EZ170D5/TR8 Zener diode is designed to be used in a wide range of applications and has a wide operating voltage range of up to 200 volts. The diode also offers excellent electrical and mechanical performance, with an exceptionally low leakage current and excellent dielectric strength.

The 3EZ170D5/TR8 is used in various applications, including power management circuits, EMI/RFI filter networks, and in consumer electronics. The diode has excellent EMI/RFI characteristics, which make it well-suited for high frequency applications. The diode’s low junction capacitance and shunt capacitance make it ideal for high-frequency applications such as switching power supplies, power amplifiers and communications systems.

The 3EZ170D5/TR8 works using the principle of avalanche breakdown. This phenomenon occurs when the voltage across the diode is increased past a threshold level. At this point, a large number of electrons are freed from their respective covalent bonds, resulting in a surge of current. This surge of current will then cause the diode to breakdown, creating a low-resistance path for current to flow through.

The 3EZ170D5/TR8 is also designed to be highly reliable. The diode is constructed using a monised structure and advanced ESD protection to ensure long-term device performance and reliability. The device also has a low power dissipation rating of 5mW, making it suitable for low-power applications such as digital circuits and logic circuits. The diode also features a temperature compensation range of -40°C to +125°C.

The 3EZ170D5/TR8 is an ideal choice for use in circuits and applications that require high voltage precision and EMI/RFI protection. The diode offers excellent electrical and mechanical performance, with low leakage current and superior ESD protection. Its wide operating voltage range of up to 200 volts makes it suitable for a range of different applications, while its low power dissipation and monised construction make it highly reliable and long-lasting.

The specific data is subject to PDF, and the above content is for reference

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