3EZ17D10E3/TR8 Allicdata Electronics
Allicdata Part #:

3EZ17D10E3/TR8-ND

Manufacturer Part#:

3EZ17D10E3/TR8

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 17V 3W DO204AL
More Detail: Zener Diode 17V 3W ±10% Through Hole DO-204AL (DO-...
DataSheet: 3EZ17D10E3/TR8 datasheet3EZ17D10E3/TR8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.48620
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 17V
Tolerance: ±10%
Power - Max: 3W
Impedance (Max) (Zzt): 6 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 13V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ17
Description

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Diodes - Zener - Single

The 3EZ17D10E3/TR8 diode is a single Zener diode. As with any diode, its application field and working principle can be broken down into its two main characteristics, conduction and breakdown. It is essential to understand these characteristics in order to make the most of the diode.

Conduction

The 3EZ17D10E3/TR8 is a static conduction device, meaning that when the anode is made more positive than the cathode, no flow of electrons occurs through the junction. In other words, the diode is acting as an open circuit. This is because the junction has to be polarized with the anode at a more positive potential than the cathode to break down the depletion zone. The depletion zone is a region of immobile ions in the p-n junction that effectively blocks the electron carriers, preventing any current flowing through the diode.

When the diode is reverse biased with the cathode more positive than the anode, the current will remain zero, due to the lack of carriers able to cross the junction to carry a current. This is known as a blocking state and is the standard mode of operation for the 3EZ17D10E3/TR8. This is beneficial in a system since it allows the diode to operate as an open circuit.

Breakdown

Breakdown, or avalanche breakdown, is what occurs when the diode is forward biased with the anode more positive than the cathode when a sufficiently high voltage is applied. When this happens, electrons from the anode and holes from the cathode combine and the depletion layer is reduced. This increase in the number of available electron and holes causes the conduction current to jump to a much higher level than before.

In the case of the 3EZ17D10E3/TR8, the breakdown voltage is 17V. This means that when the diode is reverse biased and the reverse voltage exceeds 17V, it will breakdown, allowing a surge of current through the diode. The breakdown voltage of the 3EZ17D10E3/TR8 is relatively low compared to other Zener diodes, making it suitable for use in applications that require a low breakdown voltage.

Application field and working principle

The 3EZ17D10E3/TR8 is most commonly used in Voltage Regulation and Clamping applications. Voltage Regulation involves using the diode to regulate the voltage in a circuit by adjusting the total voltage drop across the diode. This is achieved by the diode blocking any voltages that are above its breakdown voltage and allowing any voltages below it.

Clamping applications involve using the diode to limit the level of voltage fluctuations in a circuit. The diode is used to limit any excess voltage by providing a known voltage drop across the diode. In this way, any input signals that exceed a preset threshold can be clamped to a safer level.

In summary, the 3EZ17D10E3/TR8 is a single Zener diode with a static conduction direction and a breakdown voltage of 17V. It has two main application fields, Voltage Regulation and Clamping, which involve using the diode to regulate and limit voltages in a circuit.

The specific data is subject to PDF, and the above content is for reference

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