3EZ17D2E3/TR8

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Diodes are components used to conduct current in one direction while blocking current in the opposite direction. Zener diodes are a type of diode with a breakdown voltage lower than that of a standard diode. Single zone diodes are diodes with a single PN junction, for example, the 3EZ17D2E3/TR8 single zener diode.

Application Field

The 3EZ17D2E3/TR8 is a high-reliability, hermetically sealed, silicon epitaxial planar Zener diode. It has wide application in voltage regulation, surge protection, transient voltage suppression, temperature regulation and other industry applications where voltage regulation and protection are required. It is suitable for applications such as power supplies, audio circuits, computers and display systems.

Working Principle

The 3EZ17D2E3/TR8 is a single Zener diode that operates on the principle of breakdown voltage. This type of diode has a narrower voltage range in which breakdown occurs, compared to diodes with higher reverse voltage. Breakdown voltage occurs when the Zener diode is subjected to a high enough reverse voltage to exceed its barrier potential, allowing a current to flow through the junction. There are two types of breakdown – Avalanche breakdown and Zener breakdown. The 3EZ17D2E3/TR8 is a Zener diode that works on the principle of Zener breakdown. In this type of breakdown, the voltage across the diode increases exponentially with current.

When voltage is applied to the diode, electrons in the N-type region near the junction are attracted to the positively charged P-type region. This creates an electric field which restricts current. If a high enough voltage is applied, the electric field becomes so strong that it overcomes the electrostatic repulsion and allows current to pass. The voltage at which this happens is called the breakdown voltage.

The 3EZ17D2E3/TR8 is designed for reverse voltage operation, ensuring the breakdown voltage occurs only when the diode is subject to reverse voltage. This is achieved by using a P-N junction that has a large area to reduce series resistance and maximize voltage breakdown.

The 3EZ17D2E3/TR8 is designed for high current and low voltage operation, making it suitable for voltage regulation and surge protection applications. The diode also has low capacitance, making it suitable for high frequency applications.

The 3EZ17D2E3/TR8 is a hermetically sealed diode which ensures the diode is highly resistant to environmental conditions such as moisture, temperature and vibration, making it suitable for a wide range of applications. It is also designed for low leakage current, allowing for higher holding currents and making the diode less sensitive to changes in applied voltage.

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