3EZ200D5E3/TR8 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	200V
Tolerance:	±5%
Power - Max:	3W
Impedance (Max) (Zzt):	875 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 152V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	3EZ200

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    The 3EZ200D5E3/TR8 diode is a single Zener diode, a type of semiconductor diode that permits current flow in one direction only, but also allows current to flow in the opposite direction when the voltage rises above a certain value. It is often used to protect electrical and electronic components from excessive voltage by allowing current to bypass the device. Its application fields include EMI and transient protection, power supply line clamping applications, load switching, and many more. In this article, we will discuss the application field and working principle of the 3EZ200D5E3/TR8 diode.    The 3EZ200D5E3/TR8 diode is used for many applications that require EMI and transient protections. Due to its low on-state voltage drop, it is particularly suited for use in applications where a steady, low-leaking voltage is needed. The diode is also suitable for use in circuits that require low forward voltage and low noise. Furthermore, the diode provides an effective clamping voltage and protection against transients due to its high reverse breakdown voltage.    The 3EZ200D5E3/TR8 diode is also suitable for load switching applications, as it has a low on-state voltage drop and a high reverse breakdown voltage. This makes it useful for switching between power supplies, as it can handle high inrush currents without burning out. The diode also provides a steady, low-leaking voltage, making it ideal for use in power supply line clamping applications.    As for the working principle of the 3EZ200D5E3/TR8 diode, it is based on a characteristic known as a Zener breakdown. This occurs when the applied reverse-biased voltage exceeds the Zener breakdown voltage of the diode, causing an increase in the electric current through the diode. This electric current bypasses the device, protecting it from excessive voltage. The breakdown voltage of the 3EZ200D5E3/TR8 diode is 5.3 volts, while the peak impulse voltage is 200V.    The 3EZ200D5E3/TR8 diode provides many advantages for its applications, such as low on-state voltage drop, low forward voltage and low noise, and high reverse breakdown voltage. It also has a fast response time and is able to operate over a wide temperature range. The diode is also highly reliable, with a maximum power dissipation of 2.0 W.    In conclusion, the 3EZ200D5E3/TR8 diode is a single Zener diode with a breakdown voltage of 5.3 volts and a peak impulse voltage of 200V. Its application fields include EMI and transient protection, power supply line clamping applications, and load switching, and it is suitable for use in circuits that require low forward voltage and low noise. Its working principle is based on Zener breakdown, where an increase in current occurs when the applied reverse-biased voltage exceeds the Zener breakdown voltage of the diode. The 3EZ200D5E3/TR8 is highly reliable, with a fast response time, and offers many advantages for its applications.

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