3EZ36D10/TR12

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A 3EZ36D10/TR12 diode is one of the most popular semiconductor components of the single zener type. It is manufactured by a variety of vendors, such as NXP, Vishay, Nexperia and several others. It falls within the category of single zener diode, and many applications can benefit from its use.

The 3EZ36D10/TR12 is a standard 35 V zener diode with a reverse stand-off voltage of 33 V. It has a maximum power dissipation of 500 mW, and is capable of operating at temperatures ranging from -55°C to +150°C. It also has an operating current of 9 mA, a surge forward current of 200 mA, and a maximum reverse current of 500 μA. This diode is most commonly used in applications such as voltage regulation, over-voltage protection and protection against momentary voltage transients. It has a compact package, making it convenient for use in a variety of applications.

The most common use for the 3EZ36D10/TR12 is for voltage regulation. The device can be used to create a voltage reference, allowing voltage levels to be regulated and stabilized. This makes the diode ideal for applications such as power supplies, audio amplifiers and any other application where a stable voltage is required. In the event of a voltage surge, the diode can also act as an over-voltage protection device, preventing potentially dangerous voltages from damaging sensitive components. Furthermore, the diode can also be used to protect components from momentary voltage transients, such as those caused by lightning strikes.

The 3EZ36D10/TR12, with its versatile features and wide range of applications, is a popular choice for many different applications. The device has a relatively low cost, making it an attractive option for engineers. It is also small, allowing it to be used in high density designs. Furthermore, the high power rating and low reverse leakage current also make it an ideal choice for many applications.

The working principle of the 3EZ36D10/TR12 is based on the zener effect. When a voltage is applied in reverse across the component, electrons in the conduction band are pushed across the junction and form a depletion region. As the voltage further increases, these electrons eventually cross the junction, creating a region of high concentration of charge carriers known as a zener breakdown region. This causes a low-impedance path and hence a low voltage drop across the component. This effect is used to regulate the voltage across the diode and to protect against over-voltage conditions.

The 3EZ36D10/TR12 is a versatile, yet cost-effective solution for many different applications. It is a reliable component that can provide effective voltage regulation and protection from over-voltage and transient conditions. As a result, it is an attractive option for many different applications.

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