3EZ39D10/TR12 Allicdata Electronics
Allicdata Part #:

3EZ39D10/TR12-ND

Manufacturer Part#:

3EZ39D10/TR12

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 39V 3W DO204AL
More Detail: Zener Diode 39V 3W ±10% Through Hole DO-204AL (DO-...
DataSheet: 3EZ39D10/TR12 datasheet3EZ39D10/TR12 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.50009
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 39V
Tolerance: ±10%
Power - Max: 3W
Impedance (Max) (Zzt): 28 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 29.7V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ39
Description

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Diodes - Zener - Single are an important part of a wider range of electrical components. The 3EZ39D10/TR12 is a type of Zener diode designed for specific applications. It has a voltage rating of 14 Volts with a maximum power rating of 250mW. This device has a maximum reverse current of 350μA. It is a type of PN junction diode with a reverse breakdown voltage and a maximum forward currents rating. In this article, we will discuss the application field and working principle of 3EZ39D10/TR12.

The 3EZ39D10/TR12 is suitable for use in applications that require a low voltage Zener diode for controlling circuits. It is specially designed to be used in devices such as voltage regulators and voltage stabilizers. This diode is able to handle high current without damage, making it ideal for high-power applications. The diode has a low forward voltage drop, so it is suitable for use in circuits with high frequencies. The diode is also suitable for Temperature Compensated Zener Voltage (TCZ) applications, where the Zener voltage is temperature dependent.

The working principle of 3EZ39D10/TR12 is based on the reverse bias characteristics of a PN junction diode. When the diode is reverse biased, a potential barrier is created between n-region and p-region. If the applied voltage is high enough, the barrier voltage will be overcome, and current will start flowing through the diode. This is known as \'reverse breakdown voltage\'. The diode is able to regulate the current flow by limiting the voltage applied to the device. This makes it ideal for voltage regulation and voltage stabilizing applications.

The 3EZ39D10/TR12 is also suitable for use in power supplies, motor controllers, and other power switching applications. It has a low forward voltage drop and a low reverse current rating, so it is capable of handling high currents in power switching applications. The diode is also capable of withstanding large voltage spikes, making it ideal for protection from power line transients. The diode also has a high power rating, which makes it suitable for high-current applications.

The 3EZ39D10/TR12 is an important device for applications in many industries. It is capable of withstanding high currents and large voltage spikes, making it ideal for use in high-power systems. The diode also has a low forward voltage drop and a low reverse current rating, making it suitable for use in voltage regulation and voltage stabilizing applications. The diode has a low cost and high efficiency, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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