3EZ4.3D5/TR8 Allicdata Electronics
Allicdata Part #:

3EZ4.3D5/TR8-ND

Manufacturer Part#:

3EZ4.3D5/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 4.3V 3W DO204AL
More Detail: Zener Diode 4.3V 3W ±5% Through Hole DO-204AL (DO-...
DataSheet: 3EZ4.3D5/TR8 datasheet3EZ4.3D5/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 4.5 Ohms
Current - Reverse Leakage @ Vr: 30µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ4.3
Description

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A Zener diode is a type of semiconductor diode that is designed to operate in the reverse-bias breakdown region and as such is essentially a two-terminal device. Specifically, it is an electro-statically doped diode that effectively has two diode junctions in parallel. This arrangement of diodes provides additional functions in addition to those provided by either a single diode or a pair of diodes.One such application is provided by the 3EZ4.3D5/TR8 Zener diode, which is designed for general electronic circuit applications.

The 3EZ4.3D5/TR8 Zener diode is a single type device that is suitable for applications such as voltage regulation, surge protection, clipper circuits, and current limitation. It has a typical zener voltage of 4.3V with a breakdown voltage of 10V. It also has a maximum continuous current range of 680mW, a maximum power dissipation of 200mW, and a test current of 25mA. In addition, it is available in a hermetically sealed package that provides optimal reliability and performance.

The working principle of a Zener diode is based on the behavior of its P-N Junction. When the Zener diode is forward biased, the electrical current flowing through it can easily move the majority carriers from the n-type to the p-type semiconductor. This is the same as conventional forward-biasing of a P-N junction diode. However, when the diode is reversed biased, the zener diode\'s reverse saturation current, IZ,is relatively low and the majority carriers flow in the opposite direction. This is called the breakdown region, or Zener region.

The working principle of the 3EZ4.3D5/TR8 Zener diode is based on the behavior of the reverse breakdown of the P-N junction. When a Zener diode is reversed biased and a voltage greater than the Zener voltage is applied, it starts to conduct. When current is allowed to flow through the Zener diode, it creates a voltage drop across it which is relatively constant, and as a result, the voltage across the diode is maintained at the Zener voltage even if the current drawn increases. This makes the Zener diode an ideal choice for voltage regulation applications.

The 3EZ4.3D5/TR8 Zener diode is designed for general electronic circuit applications and is suitable for voltage regulation, surge protection, clipper circuits, and current limitation. It has a relatively low Zener voltage of 4.3V, a breakdown voltage of 10V, a maximum continuous current range of 680mW, and a maximum power dissipation of 200mW. The hermetically sealed package provides optimal reliability and performance. Furthermore, its working principle is based on the reverse breakdown of the P-N junction and it is able to maintain a constant voltage across itself even if the current drawn increases.

The specific data is subject to PDF, and the above content is for reference

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